WVM28N10 Specs and Replacement
Type Designator: WVM28N10
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 150 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 28 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
ton ⓘ - Turn-on Time: 110 nS
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.177 Ohm
Package: TO3
WVM28N10 substitution
- MOSFET ⓘ Cross-Reference Search
WVM28N10 datasheet
wvm28n10.pdf
Shaanxi Qunli Electric Co., Ltd Add. No. 1 Qunli Road,Baoji City,Shaanxi,China WVM28N10(IRF140) Power MOSFET(N-channel) Transistor Features 1. It s voltage control component with good input impedance, small starting power dissipation, wide area of safe operation, good temperature stability. 2. Implementation of standards QZJ840611 3. Use for high speed switch, circuit of power s... See More ⇒
Detailed specifications: WVM15N45, WVM15N50, WVM15N60, WVM18N20, WVM20N50, WVM20N8, WVM21N50, WVM25N40, IRF4905, WVM3.9N100, WVM30N10, WVM30N20, WVM30N30, WVM3N10, WVM3N30, WVM40N20, WVM4N20
Keywords - WVM28N10 MOSFET specs
WVM28N10 cross reference
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