WVM40N20 Datasheet and Replacement
Type Designator: WVM40N20
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 250 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 40 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
ton ⓘ - Turn-on Time: 300 nS
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.08 Ohm
Package: TO3
WVM40N20 substitution
WVM40N20 Datasheet (PDF)
wvm40n20.pdf

Shaanxi Qunli Electric Co., Ltd Add.:No. 1 Qunli Road,Baoji City,Shaanxi,China WVM40N20(MTM40N20) Power MOSFET(N-channel) TransistorFeatures: 1. Its voltage control component with good input impedance, small starting power dissipation, wide area of safe operation, good temperature stability. 2. Implementation of standards: QZJ840611 3. Use for high speed switch, circuit of powe
Datasheet: WVM25N40 , WVM28N10 , WVM3.9N100 , WVM30N10 , WVM30N20 , WVM30N30 , WVM3N10 , WVM3N30 , IRF9540N , WVM4N20 , WVM4N50 , WVM55N10 , WVM6N100 , WVM7N12 , WVM8N20 , WVM8N60 , WVM9.5N100 .
History: NCE0202ZA | AON6790 | WTM3401 | KSK596 | NDC632P | HPW080NE5SPA | NP90N04VDG
Keywords - WVM40N20 MOSFET datasheet
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History: NCE0202ZA | AON6790 | WTM3401 | KSK596 | NDC632P | HPW080NE5SPA | NP90N04VDG



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