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WVM7N12 Specs and Replacement

Type Designator: WVM7N12

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 100 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 120 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 7 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

ton ⓘ - Turn-on Time: 180 nS

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.5 Ohm

Package: TO3

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WVM7N12 datasheet

 ..1. Size:23K  shaanxi
 wvm7n12.pdf pdf_icon

WVM7N12

Shaanxi Qunli Electric Co., Ltd Add. No. 1 Qunli Road,Baoji City,Shaanxi,China WVM7N12(2SK133) Power MOSFET(N-channel) Transistor Features 1. It s voltage control component with good input impedance, small starting power dissipation, wide area of safe operation, good temperature stability. 2. Implementation of standards QZJ840611 3. Use for high speed switch, circuit of power so... See More ⇒

Detailed specifications: WVM30N30, WVM3N10, WVM3N30, WVM40N20, WVM4N20, WVM4N50, WVM55N10, WVM6N100, 5N65, WVM8N20, WVM8N60, WVM9.5N100, WW459, XN0NE92, PSMN017-30BL, PSMN017-30EL, PSMN017-30PL

Keywords - WVM7N12 MOSFET specs

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