All MOSFET. WVM7N12 Datasheet

 

WVM7N12 Datasheet and Replacement


   Type Designator: WVM7N12
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 100 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 120 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 7 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   ton ⓘ - Turn-on Time: 180 nS
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.5 Ohm
   Package: TO3
 

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WVM7N12 Datasheet (PDF)

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WVM7N12

Shaanxi Qunli Electric Co., Ltd Add.:No. 1 Qunli Road,Baoji City,Shaanxi,China WVM7N12(2SK133)Power MOSFET(N-channel) TransistorFeatures: 1. Its voltage control component with good input impedance, small starting power dissipation, wide area of safe operation, good temperature stability. 2. Implementation of standards: QZJ840611 3. Use for high speed switch, circuit of power so

Datasheet: WVM30N30 , WVM3N10 , WVM3N30 , WVM40N20 , WVM4N20 , WVM4N50 , WVM55N10 , WVM6N100 , 4435 , WVM8N20 , WVM8N60 , WVM9.5N100 , WW459 , XN0NE92 , PSMN017-30BL , PSMN017-30EL , PSMN017-30PL .

History: SK840320 | SSF6N80F | RU40C40M | 2N7640-GA | SSB80R160S2 | IRFR3910TR | HMS80N85D

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