All MOSFET. XN0NE92 Datasheet

 

XN0NE92 Datasheet and Replacement


   Type Designator: XN0NE92
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pdⓘ - Maximum Power Dissipation: 0.6 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 12 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Id|ⓘ - Maximum Drain Current: 1.2 A
   Tjⓘ - Maximum Junction Temperature: 125 °C
   tonⓘ - Turn-on Time: 15 nS
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.45 Ohm
   Package: SOT-25
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XN0NE92 Datasheet (PDF)

 ..1. Size:87K  panasonic
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XN0NE92

This product complies with the RoHS Directive (EU 2002/95/EC).Composite TransistorsXN0NE92Silicon P-channel MOSFET (FET)Silicon epitaxial planar type (SBD)Unit: mmFor DC-DC converter0.30+0.100.050.16+0.100.062 Features Two elements incorporated into one package Reduction of the mounting area and assembly cost by one half3 4 High-speed switching,

Datasheet: FQT7N10L , FDP083N15A , FQU10N20C , FDP075N15A , FQU11P06 , FQU12N20 , FDPF085N10A , FQU13N06L , IRFZ44 , FDB86102LZ , FQU17P06 , FQU1N60C , FDP085N10A , FQU20N06L , FQU2N100 , FQU2N60C , FDMC8030 .

History: MCH3484 | DMN30H4D0L

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