All MOSFET. XN0NE92 Datasheet

 

XN0NE92 Datasheet and Replacement


   Type Designator: XN0NE92
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 0.6 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 12 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Id| ⓘ - Maximum Drain Current: 1.2 A
   Tj ⓘ - Maximum Junction Temperature: 125 °C
   ton ⓘ - Turn-on Time: 15 nS
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.45 Ohm
   Package: SOT-25
 

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XN0NE92 Datasheet (PDF)

 ..1. Size:87K  panasonic
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XN0NE92

This product complies with the RoHS Directive (EU 2002/95/EC).Composite TransistorsXN0NE92Silicon P-channel MOSFET (FET)Silicon epitaxial planar type (SBD)Unit: mmFor DC-DC converter0.30+0.100.050.16+0.100.062 Features Two elements incorporated into one package Reduction of the mounting area and assembly cost by one half3 4 High-speed switching,

Datasheet: WVM4N50 , WVM55N10 , WVM6N100 , WVM7N12 , WVM8N20 , WVM8N60 , WVM9.5N100 , WW459 , IRLB4132 , PSMN017-30BL , PSMN017-30EL , PSMN017-30PL , PSMN017-80BS , PSMN020-150W , PSMN020-30MLC , PSMN022-30BL , PSMN023-40YLC .

History: PSMN011-60MS

Keywords - XN0NE92 MOSFET datasheet

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