XN0NE92 Datasheet and Replacement
Type Designator: XN0NE92
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pd ⓘ - Maximum Power Dissipation: 0.6 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 12 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
|Id| ⓘ - Maximum Drain Current: 1.2 A
Tj ⓘ - Maximum Junction Temperature: 125 °C
ton ⓘ - Turn-on Time: 15 nS
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.45 Ohm
Package: SOT-25
XN0NE92 substitution
XN0NE92 Datasheet (PDF)
xn0ne92.pdf

This product complies with the RoHS Directive (EU 2002/95/EC).Composite TransistorsXN0NE92Silicon P-channel MOSFET (FET)Silicon epitaxial planar type (SBD)Unit: mmFor DC-DC converter0.30+0.100.050.16+0.100.062 Features Two elements incorporated into one package Reduction of the mounting area and assembly cost by one half3 4 High-speed switching,
Datasheet: WVM4N50 , WVM55N10 , WVM6N100 , WVM7N12 , WVM8N20 , WVM8N60 , WVM9.5N100 , WW459 , 5N65 , PSMN017-30BL , PSMN017-30EL , PSMN017-30PL , PSMN017-80BS , PSMN020-150W , PSMN020-30MLC , PSMN022-30BL , PSMN023-40YLC .
History: SVSP20N60P7D2 | WMB240P10HG4 | SRC60R145BS | MTB060N06I3 | WSP4953A | WMB072N12LG2-S | MTB06N03E3
Keywords - XN0NE92 MOSFET datasheet
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History: SVSP20N60P7D2 | WMB240P10HG4 | SRC60R145BS | MTB060N06I3 | WSP4953A | WMB072N12LG2-S | MTB06N03E3



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