All MOSFET. XN0NE92 Datasheet

 

XN0NE92 MOSFET. Datasheet pdf. Equivalent


   Type Designator: XN0NE92
   Marking Code: 3F
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pdⓘ - Maximum Power Dissipation: 0.6 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 12 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1.3 V
   |Id|ⓘ - Maximum Drain Current: 1.2 A
   Tjⓘ - Maximum Junction Temperature: 125 °C
   tonⓘ - Turn-on Time: 15 nS
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.45 Ohm
   Package: SOT-25

 XN0NE92 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

XN0NE92 Datasheet (PDF)

 ..1. Size:87K  panasonic
 xn0ne92.pdf

XN0NE92 XN0NE92

This product complies with the RoHS Directive (EU 2002/95/EC).Composite TransistorsXN0NE92Silicon P-channel MOSFET (FET)Silicon epitaxial planar type (SBD)Unit: mmFor DC-DC converter0.30+0.100.050.16+0.100.062 Features Two elements incorporated into one package Reduction of the mounting area and assembly cost by one half3 4 High-speed switching,

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

History: IRFF130

 

 
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