XN0NE92 MOSFET. Datasheet pdf. Equivalent
Type Designator: XN0NE92
Marking Code: 3F
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pdⓘ - Maximum Power Dissipation: 0.6 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 12 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1.3 V
|Id|ⓘ - Maximum Drain Current: 1.2 A
Tjⓘ - Maximum Junction Temperature: 125 °C
tonⓘ - Turn-on Time: 15 nS
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.45 Ohm
Package: SOT-25
XN0NE92 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
XN0NE92 Datasheet (PDF)
xn0ne92.pdf
This product complies with the RoHS Directive (EU 2002/95/EC).Composite TransistorsXN0NE92Silicon P-channel MOSFET (FET)Silicon epitaxial planar type (SBD)Unit: mmFor DC-DC converter0.30+0.100.050.16+0.100.062 Features Two elements incorporated into one package Reduction of the mounting area and assembly cost by one half3 4 High-speed switching,
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MOSFET: DAMIA1100N100 | DAMI660N60 | DAMI560N100 | DAMI500N60 | DAMI450N100 | DAMI360N150 | DAMI330N60 | DAMI320N100 | DAMI300N150 | DAMI280N200 | DAMI220N200 | DAMI220N150 | DAMI160N200 | DAMI160N100 | DAMH75N500H | DAMH560N100