All MOSFET. MMN600DB012B Datasheet

 

MMN600DB012B Datasheet and Replacement


   Type Designator: MMN600DB012B
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 1500 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 120 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 905 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 200 nS
   Cossⓘ - Output Capacitance: 23500 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0006 Ohm
   Package: MODULE
 

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MMN600DB012B Datasheet (PDF)

 ..1. Size:433K  macmic
 mmn600db012b.pdf pdf_icon

MMN600DB012B

8879::;

 4.1. Size:312K  macmic
 mmn600db015b.pdf pdf_icon

MMN600DB012B

MMN600DB015B150V 600A N-ch Power MOSFET ModuleApril 2015 Version 0 RoHS CompliantPRODUCT FEATURES RDS(ON).typ=1.8m@VGS=10V 175 junction temperature Low Gate Charge Minimize Switching Loss Fast Recovery body Diode 20K Gate Protected Resistance InsideAPPLICATIONS High efficiency DC/DC Converters ISG EV Products UPS inverterVDS ID RDS(ON)

 9.1. Size:146K  m-mos
 mmn60nf06.pdf pdf_icon

MMN600DB012B

MMN60NF06Data SheetM-MOS Semiconductor Sdn. Bhd.60V N-Channel Enhancement-Mode MOSFETVDS= 60VRDS(ON), Vgs@10V, Ids@30A = 16mFeaturesAdvanced trench process technologyHigh Density Cell Design For Ultra Low On-ResistanceHigh Power and Current handing capabilityFully Characterized Avalanche Voltage and CurrentTO-220 Internal Schematic DiagramDrain Gate Source Top V

Datasheet: XP202A0003MR-G , XP202A0003PR-G , YTF830 , 2SK1029 , 2SK1197 , 2SK1297 , MMN400A006U1 , MMN400A010U1 , IRF2807 , MMN600DB015B , MMN668A010U1 , FTP03N06NA , ITP09N50A , HX2301 , HX2301A , HX2302 , HX2302A .

History: OSG65R125PF | LSB65R125HT | MRF166 | RT3K11M | PHD18NQ10T | H02N60SI | VEC2315

Keywords - MMN600DB012B MOSFET datasheet

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