MMN668A010U1 MOSFET Datasheet: N-Ch, 100V, 668A. Full specification with pinout and replacement list

MMN668A010U1 Specs and Replacement

Type Designator: MMN668A010U1

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1071 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 668 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 88 nS

Cossⓘ - Output Capacitance: 3050 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0014 Ohm

Package: MODULE

MMN668A010U1 substitution

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MMN668A010U1 datasheet

..1. Size:638K macmic
mmn668a010u1.pdf pdf_icon

MMN668A010U1 100V 668A N-ch Power MOSFET Module May 2016 Preliminary RoHS Compliant PRODUCT FEATURES RDS(ON).typ=1.1m @VGS=10V 175 operating temperature Low Gate Charge Minimize Switching Loss Fast Recovery body Diode 20K Gate Protected Resistance Inside Inside the module,each MOSFET chip has a gate resistance 2.2 APPLICATIONS High efficiency DC... See More ⇒

8.1. Size:201K m-mos
mmn6680.pdf pdf_icon

MMN6680 Data Sheet M-MOS Semiconductor Hong Kong Limited 30V N-Channel Enhancement-Mode MOSFET VDS= 30V RDS(ON), Vgs@10V, Ids@12A = 11m RDS(ON), Vgs@4.5V, Ids@12A = 18m Features Advanced trench process technology High Density Cell Design For Ultra Low On-Resistance Fully Characterized Avalanche Voltage and Current Improved Shoot-Through FOM SOP-08 Internal Schematic Diagram T... See More ⇒

Detailed specifications: YTF830, 2SK1029, 2SK1197, 2SK1297, MMN400A006U1, MMN400A010U1, MMN600DB012B, MMN600DB015B, 2N60, FTP03N06NA, ITP09N50A, HX2301, HX2301A, HX2302, HX2302A, HX2305, HX3400