MMN668A010U1 MOSFET. Datasheet pdf. Equivalent
Type Designator: MMN668A010U1
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 1071 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id|ⓘ - Maximum Drain Current: 668 A
Tjⓘ - Maximum Junction Temperature: 175 °C
Qgⓘ - Total Gate Charge: 660 nC
trⓘ - Rise Time: 88 nS
Cossⓘ - Output Capacitance: 3050 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0014 Ohm
Package: MODULE
MMN668A010U1 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
MMN668A010U1 Datasheet (PDF)
mmn668a010u1.pdf
MMN668A010U1100V 668A N-ch Power MOSFET ModuleMay 2016 Preliminary RoHS CompliantPRODUCT FEATURES RDS(ON).typ=1.1m@VGS=10V 175operating temperature Low Gate Charge Minimize Switching Loss Fast Recovery body Diode 20K Gate Protected Resistance Inside Inside the module,each MOSFET chip has a gate resistance:2.2APPLICATIONS High efficiency DC
mmn6680.pdf
MMN6680Data SheetM-MOS Semiconductor Hong Kong Limited30V N-Channel Enhancement-Mode MOSFETVDS= 30VRDS(ON), Vgs@10V, Ids@12A = 11mRDS(ON), Vgs@4.5V, Ids@12A = 18mFeaturesAdvanced trench process technologyHigh Density Cell Design For Ultra Low On-ResistanceFully Characterized Avalanche Voltage and CurrentImproved Shoot-Through FOMSOP-08 Internal Schematic DiagramT
Datasheet: IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 2SK3568 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .
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