All MOSFET. MMN668A010U1 Datasheet

 

MMN668A010U1 Datasheet and Replacement


   Type Designator: MMN668A010U1
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 1071 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 668 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 88 nS
   Cossⓘ - Output Capacitance: 3050 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0014 Ohm
   Package: MODULE
 

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MMN668A010U1 Datasheet (PDF)

 ..1. Size:638K  macmic
 mmn668a010u1.pdf pdf_icon

MMN668A010U1

MMN668A010U1100V 668A N-ch Power MOSFET ModuleMay 2016 Preliminary RoHS CompliantPRODUCT FEATURES RDS(ON).typ=1.1m@VGS=10V 175operating temperature Low Gate Charge Minimize Switching Loss Fast Recovery body Diode 20K Gate Protected Resistance Inside Inside the module,each MOSFET chip has a gate resistance:2.2APPLICATIONS High efficiency DC

 8.1. Size:201K  m-mos
 mmn6680.pdf pdf_icon

MMN668A010U1

MMN6680Data SheetM-MOS Semiconductor Hong Kong Limited30V N-Channel Enhancement-Mode MOSFETVDS= 30VRDS(ON), Vgs@10V, Ids@12A = 11mRDS(ON), Vgs@4.5V, Ids@12A = 18mFeaturesAdvanced trench process technologyHigh Density Cell Design For Ultra Low On-ResistanceFully Characterized Avalanche Voltage and CurrentImproved Shoot-Through FOMSOP-08 Internal Schematic DiagramT

Datasheet: YTF830 , 2SK1029 , 2SK1197 , 2SK1297 , MMN400A006U1 , MMN400A010U1 , MMN600DB012B , MMN600DB015B , IRF830 , FTP03N06NA , ITP09N50A , HX2301 , HX2301A , HX2302 , HX2302A , HX2305 , HX3400 .

History: NVMFD020N06C | IPD90N04S3-H4 | AFP8452 | HM120N04D

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