All MOSFET. MMN668A010U1 Datasheet

 

MMN668A010U1 Datasheet and Replacement


   Type Designator: MMN668A010U1
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 1071 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 668 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   trⓘ - Rise Time: 88 nS
   Cossⓘ - Output Capacitance: 3050 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0014 Ohm
   Package: MODULE
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MMN668A010U1 Datasheet (PDF)

 ..1. Size:638K  macmic
 mmn668a010u1.pdf pdf_icon

MMN668A010U1

MMN668A010U1100V 668A N-ch Power MOSFET ModuleMay 2016 Preliminary RoHS CompliantPRODUCT FEATURES RDS(ON).typ=1.1m@VGS=10V 175operating temperature Low Gate Charge Minimize Switching Loss Fast Recovery body Diode 20K Gate Protected Resistance Inside Inside the module,each MOSFET chip has a gate resistance:2.2APPLICATIONS High efficiency DC

 8.1. Size:201K  m-mos
 mmn6680.pdf pdf_icon

MMN668A010U1

MMN6680Data SheetM-MOS Semiconductor Hong Kong Limited30V N-Channel Enhancement-Mode MOSFETVDS= 30VRDS(ON), Vgs@10V, Ids@12A = 11mRDS(ON), Vgs@4.5V, Ids@12A = 18mFeaturesAdvanced trench process technologyHigh Density Cell Design For Ultra Low On-ResistanceFully Characterized Avalanche Voltage and CurrentImproved Shoot-Through FOMSOP-08 Internal Schematic DiagramT

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History: FQD4N25TM | 2SK3192

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