ITP09N50A Specs and Replacement
Type Designator: ITP09N50A
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 140 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 9 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 32 nS
Cossⓘ - Output Capacitance: 130 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.75 Ohm
Package: TO220
ITP09N50A substitution
- MOSFET ⓘ Cross-Reference Search
ITP09N50A datasheet
itp09n50a.pdf
ITP09N50A N-Channel MOSFET Pb Lead Free Package and Finish Applications VDSS RDS(ON) (Typ.) ID Adaptor Charger 500 V 0.55 9.0 A SMPS Standby Power Features RoHS Compliant D Low ON Resistance Low Gate Charge Peak Current vs Pulse Width Curve G G D S Ordering Information PART NUMBER PACKAGE BRAND TO-220 S Not to Scale ITP09N50A TO-220 ITP0... See More ⇒
Detailed specifications: 2SK1197, 2SK1297, MMN400A006U1, MMN400A010U1, MMN600DB012B, MMN600DB015B, MMN668A010U1, FTP03N06NA, P60NF06, HX2301, HX2301A, HX2302, HX2302A, HX2305, HX3400, HX3400A, HX3401
Keywords - ITP09N50A MOSFET specs
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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.
History: RTR025N05 | SUN0460D
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