All MOSFET. HX3415 Datasheet

 

HX3415 Datasheet and Replacement


   Type Designator: HX3415
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 1 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
   |Id| ⓘ - Maximum Drain Current: 4 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 9 nS
   Cossⓘ - Output Capacitance: 115 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.045 Ohm
   Package: SOT23
 

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HX3415 Datasheet (PDF)

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HX3415

HX3415P-Channel Enhancement Mode MOSFETDescription Schematic diagramThe HX3415 uses advanced trench technologyto provide excellent R , low gate charge andDS(ON)operation with gate voltages as low as 1.8V. Thisdevice is suitable for use as a load switch or in PWMapplications.General Features V =-20VI =-4ADS DR (Typ.)=42m @V =-2.5VDS(ON) GSR (Typ.)=38.3m @V

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HX3415

HX3415AP-Channel Enhancement Mode MOSFETDescription Schematic diagramThe HX3415 uses advanced trench technologyto provide excellent R , low gate charge andDS(ON)operation with gate voltages as low as 1.8V. Thisdevice is suitable for use as a load switch or in PWMapplications.General Features V =-20VI =-4ADS DR (Typ.)=42m @V =-2.5VDS(ON) GSR (Typ.)=38.3m @

Datasheet: HX2301A , HX2302 , HX2302A , HX2305 , HX3400 , HX3400A , HX3401 , HX3401A , 60N06 , HX3415A , HD2302 , HD2305 , HD2307 , HD2310 , HD2312 , SVD3205F , SVD3205S .

History: PSMN016-100YS

Keywords - HX3415 MOSFET datasheet

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