HX3415 Datasheet and Replacement
Type Designator: HX3415
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pd ⓘ - Maximum Power Dissipation: 1 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
|Id| ⓘ - Maximum Drain Current: 4 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 9 nS
Cossⓘ - Output Capacitance: 115 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.045 Ohm
Package: SOT23
HX3415 substitution
HX3415 Datasheet (PDF)
hx3415.pdf

HX3415P-Channel Enhancement Mode MOSFETDescription Schematic diagramThe HX3415 uses advanced trench technologyto provide excellent R , low gate charge andDS(ON)operation with gate voltages as low as 1.8V. Thisdevice is suitable for use as a load switch or in PWMapplications.General Features V =-20VI =-4ADS DR (Typ.)=42m @V =-2.5VDS(ON) GSR (Typ.)=38.3m @V
hx3415a.pdf

HX3415AP-Channel Enhancement Mode MOSFETDescription Schematic diagramThe HX3415 uses advanced trench technologyto provide excellent R , low gate charge andDS(ON)operation with gate voltages as low as 1.8V. Thisdevice is suitable for use as a load switch or in PWMapplications.General Features V =-20VI =-4ADS DR (Typ.)=42m @V =-2.5VDS(ON) GSR (Typ.)=38.3m @
Datasheet: HX2301A , HX2302 , HX2302A , HX2305 , HX3400 , HX3400A , HX3401 , HX3401A , 60N06 , HX3415A , HD2302 , HD2305 , HD2307 , HD2310 , HD2312 , SVD3205F , SVD3205S .
Keywords - HX3415 MOSFET datasheet
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History: SI3415A | BRF20N60



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