HX3415 Specs and Replacement
Type Designator: HX3415
Type of Transistor: MOSFET
Type of Control Channel: P-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 1 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
|Id| ⓘ - Maximum Drain Current: 4 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 9 nS
Cossⓘ - Output Capacitance: 115 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.045 Ohm
Package: SOT23
HX3415 substitution
- MOSFET ⓘ Cross-Reference Search
HX3415 datasheet
hx3415.pdf
HX3415 P-Channel Enhancement Mode MOSFET Description Schematic diagram The HX3415 uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 1.8V. This device is suitable for use as a load switch or in PWM applications. General Features V =-20V I =-4A DS D R (Typ.)=42m @V =-2.5V DS(ON) GS R (Typ.)=38.3m @V... See More ⇒
hx3415a.pdf
HX3415A P-Channel Enhancement Mode MOSFET Description Schematic diagram The HX3415 uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 1.8V. This device is suitable for use as a load switch or in PWM applications. General Features V =-20V I =-4A DS D R (Typ.)=42m @V =-2.5V DS(ON) GS R (Typ.)=38.3m @... See More ⇒
Detailed specifications: HX2301A, HX2302, HX2302A, HX2305, HX3400, HX3400A, HX3401, HX3401A, IRLB3034, HX3415A, HD2302, HD2305, HD2307, HD2310, HD2312, SVD3205F, SVD3205S
Keywords - HX3415 MOSFET specs
HX3415 cross reference
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Can't find your MOSFET? Learn how to find a substitute transistor by analyzing voltage, current and package compatibility
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