SVD3205F PDF and Equivalents Search

 

SVD3205F Specs and Replacement

Type Designator: SVD3205F

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 58 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 55 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 110 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 82.96 nS

Cossⓘ - Output Capacitance: 740.4 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.008 Ohm

Package: TO220F

SVD3205F substitution

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SVD3205F datasheet

 ..1. Size:374K  silan
 svd3205t svd3205f svd3205s.pdf pdf_icon

SVD3205F

SVD3205T/F/S 110A 55V N 2 SVD3205T/F/S N MOS VDMOS 1 1 3 3 T... See More ⇒

 ..2. Size:329K  silan
 svd3205t svd3205f svd3205s svd3205str.pdf pdf_icon

SVD3205F

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 7.1. Size:218K  1
 svd3205t.pdf pdf_icon

SVD3205F

SVD3205T_Datasheet 110A, 55V N-CHANNEL MOSFET GENERAL DESCRIPTION SVD3205T is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary S-RinTM structure VDMOS technology. The improved planar stripe cell and the improved guard ring terminal have been especially tailored to minimize on-state resistance, provide superior switching per... See More ⇒

Detailed specifications: HX3401A, HX3415, HX3415A, HD2302, HD2305, HD2307, HD2310, HD2312, MMIS60R580P, SVD3205S, SVD501DEAG, SVD50N06T, SVD50N06D, SVD50N06M, SVD50N06MJ, SVD540T, SVD540D

Keywords - SVD3205F MOSFET specs

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