All MOSFET. SVD3205F Datasheet

 

SVD3205F MOSFET. Datasheet pdf. Equivalent


   Type Designator: SVD3205F
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 58 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 55 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3.5 V
   |Id|ⓘ - Maximum Drain Current: 110 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 67.09 nC
   trⓘ - Rise Time: 82.96 nS
   Cossⓘ - Output Capacitance: 740.4 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.008 Ohm
   Package: TO220F

 SVD3205F Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

SVD3205F Datasheet (PDF)

 ..1. Size:374K  silan
 svd3205t svd3205f svd3205s.pdf

SVD3205F SVD3205F

SVD3205T/F/S 110A55V N 2SVD3205T/F/S N MOS VDMOS 1133 T

 ..2. Size:329K  silan
 svd3205t svd3205f svd3205s svd3205str.pdf

SVD3205F SVD3205F

SVD3205T(F)(S) 110A55V N 2SVD3205T/F/S N MOS VDMOS 11 3

 7.1. Size:218K  1
 svd3205t.pdf

SVD3205F SVD3205F

SVD3205T_Datasheet 110A, 55V N-CHANNEL MOSFET GENERAL DESCRIPTION SVD3205T is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietaryS-RinTM structure VDMOS technology. The improved planar stripe cell and the improved guard ring terminal have been especially tailored to minimize on-state resistance, provide superior switching per

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History: IXTQ460P2 | IXTH10P60 | IXTA88N085T | IRCZ245

 

 
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