All MOSFET. SVD3205S Datasheet

 

SVD3205S Datasheet and Replacement


   Type Designator: SVD3205S
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 190 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 55 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 110 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 82.96 nS
   Cossⓘ - Output Capacitance: 740.4 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.008 Ohm
   Package: TO263
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SVD3205S Datasheet (PDF)

 ..1. Size:374K  silan
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SVD3205S

SVD3205T/F/S 110A55V N 2SVD3205T/F/S N MOS VDMOS 1133 T

 ..2. Size:329K  silan
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SVD3205S

SVD3205T(F)(S) 110A55V N 2SVD3205T/F/S N MOS VDMOS 11 3

 7.1. Size:218K  1
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SVD3205S

SVD3205T_Datasheet 110A, 55V N-CHANNEL MOSFET GENERAL DESCRIPTION SVD3205T is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietaryS-RinTM structure VDMOS technology. The improved planar stripe cell and the improved guard ring terminal have been especially tailored to minimize on-state resistance, provide superior switching per

Datasheet: IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 2SK3568 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .

History: BSZ035N03LSG | SVF9N90F

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