SVD3205S Specs and Replacement
Type Designator: SVD3205S
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 190 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 55 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 110 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 82.96 nS
Cossⓘ - Output Capacitance: 740.4 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.008 Ohm
Package: TO263
SVD3205S substitution
- MOSFET ⓘ Cross-Reference Search
SVD3205S datasheet
svd3205t svd3205f svd3205s.pdf
SVD3205T/F/S 110A 55V N 2 SVD3205T/F/S N MOS VDMOS 1 1 3 3 T... See More ⇒
svd3205t.pdf
SVD3205T_Datasheet 110A, 55V N-CHANNEL MOSFET GENERAL DESCRIPTION SVD3205T is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary S-RinTM structure VDMOS technology. The improved planar stripe cell and the improved guard ring terminal have been especially tailored to minimize on-state resistance, provide superior switching per... See More ⇒
Detailed specifications: HX3415, HX3415A, HD2302, HD2305, HD2307, HD2310, HD2312, SVD3205F, AOD4184A, SVD501DEAG, SVD50N06T, SVD50N06D, SVD50N06M, SVD50N06MJ, SVD540T, SVD540D, SVD540K
Keywords - SVD3205S MOSFET specs
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