All MOSFET. SVD3205S Datasheet

 

SVD3205S Datasheet and Replacement


   Type Designator: SVD3205S
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 190 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 55 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 110 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 82.96 nS
   Cossⓘ - Output Capacitance: 740.4 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.008 Ohm
   Package: TO263
 

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SVD3205S Datasheet (PDF)

 ..1. Size:374K  silan
 svd3205t svd3205f svd3205s.pdf pdf_icon

SVD3205S

SVD3205T/F/S 110A55V N 2SVD3205T/F/S N MOS VDMOS 1133 T

 ..2. Size:329K  silan
 svd3205t svd3205f svd3205s svd3205str.pdf pdf_icon

SVD3205S

SVD3205T(F)(S) 110A55V N 2SVD3205T/F/S N MOS VDMOS 11 3

 7.1. Size:218K  1
 svd3205t.pdf pdf_icon

SVD3205S

SVD3205T_Datasheet 110A, 55V N-CHANNEL MOSFET GENERAL DESCRIPTION SVD3205T is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietaryS-RinTM structure VDMOS technology. The improved planar stripe cell and the improved guard ring terminal have been especially tailored to minimize on-state resistance, provide superior switching per

Datasheet: HX3415 , HX3415A , HD2302 , HD2305 , HD2307 , HD2310 , HD2312 , SVD3205F , HY1906P , SVD501DEAG , SVD50N06T , SVD50N06D , SVD50N06M , SVD50N06MJ , SVD540T , SVD540D , SVD540K .

History: IRFSL3107PBF | AON6206

Keywords - SVD3205S MOSFET datasheet

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