MNT-LB32N16 Specs and Replacement
Type Designator: MNT-LB32N16
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 500 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 160 V
|Id| ⓘ - Maximum Drain Current: 32 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.2 Ohm
Package: SMARTC2
MNT-LB32N16 substitution
- MOSFET ⓘ Cross-Reference Search
MNT-LB32N16 datasheet
mnt-lb32n16 mnt-lb32n20.pdf
MNT - LB32N16 MNT - LB32N20 MECHANICAL DATA Dimensions in mm SMARTPACK POWER MODULE 24.0 10.5 POWER MOSFETS FOR AUDIO APPLICATIONS FEATURES N - CHANNEL POWER MOSFETS 4.25 HIGH SPEED SWITCHING SEMEFAB DESIGNED AND DIFFUSED HIGH VOLTAGE (160V & 200V) HIGH ENERGY RATING 43.5 ENHANCEMENT MODE CASE 2 INTEGRAL PROTECTION DIODE P - CHANNEL AVAI... See More ⇒
Detailed specifications: LS3956, LS3958, MEM554, MEM554C, MEM564C, MEM610, MEM614, MMBF170, IRFP250, MNT-LB32N16-C4, MNT-LB32N20, MNT-LB32N20-C4, MTB30N06VL, MTB30P06V, MTB35N06ZL, MTP10N10M, MTP3055E
Keywords - MNT-LB32N16 MOSFET specs
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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.
History: XP202A0003PR-G | HM13N50F | 2SK1081 | FQB50N06
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