All MOSFET. MNT-LB32N16 Datasheet

 

MNT-LB32N16 Datasheet and Replacement


   Type Designator: MNT-LB32N16
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 500 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 160 V
   |Id|ⓘ - Maximum Drain Current: 32 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.2 Ohm
   Package: SMARTC2
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MNT-LB32N16 Datasheet (PDF)

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MNT-LB32N16

MNT - LB32N16 MNT - LB32N20 MECHANICAL DATADimensions in mmSMARTPACK POWER MODULE24.010.5POWER MOSFETS FOR AUDIO APPLICATIONSFEATURES N - CHANNEL POWER MOSFETS 4.25 HIGH SPEED SWITCHING SEMEFAB DESIGNED AND DIFFUSED HIGH VOLTAGE (160V & 200V) HIGH ENERGY RATING43.5 ENHANCEMENT MODECASE 2 INTEGRAL PROTECTION DIODE P - CHANNEL AVAI

Datasheet: LS3956 , LS3958 , MEM554 , MEM554C , MEM564C , MEM610 , MEM614 , MMBF170 , IRF2807 , MNT-LB32N16-C4 , MNT-LB32N20 , MNT-LB32N20-C4 , MTB30N06VL , MTB30P06V , MTB35N06ZL , MTP10N10M , MTP3055E .

History: FTK5N50D | FDMC7208S | STD4NK60ZT4 | WSD20L70DN | AP30N30W | 2SK2845 | 2SK2129

Keywords - MNT-LB32N16 MOSFET datasheet

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