SVF10N60F
MOSFET. Datasheet pdf. Equivalent
Type Designator: SVF10N60F
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 50
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4
V
|Id|ⓘ - Maximum Drain Current: 10
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 19.38
nC
trⓘ - Rise Time: 60.4
nS
Cossⓘ -
Output Capacitance: 135
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 1
Ohm
Package:
TO220F
SVF10N60F
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
SVF10N60F
Datasheet (PDF)
6.1. Size:324K silan
svf10n60cafj.pdf 
SVF10N60CAFJ 10A600V N 2SVF10N60CAFJ N MOS F-CellTM VDMOS 13 1. 2.
6.2. Size:577K silan
svf10n60cfj.pdf
SVF10N60CFJ 10A600V N 2SVF10N60CFJ N MOS F-CellTM VDMOS 13 1. 2. 3.
7.1. Size:601K 1
svf10n65f svf10n65t.pdf
SVF10N65T/F_Datasheet 10A, 650V N-CHANNEL MOSFET GENERAL DESCRIPTION SVF10N65T/F is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-CellTM structure VDMOS technology. Theimproved planar stripe cell and the improved guard ring terminal have been especially tailored to minimize on-state resistance, provide superior switch
7.3. Size:290K silan
svf10n65cfj.pdf
SVF10N65CFJ_Datasheet 10A, 650V N-CHANNEL MOSFET GENERAL DESCRIPTION SVF10N65CFJ is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-CellTM structure VDMOS technology. The improved process and cell structure have been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand
7.5. Size:414K silan
svf10n65ca.pdf
SVF10N65CA 10A650V N 2SVF10N65CA N MOS F-CellTM VDMOS 13
Datasheet: AM3401
, AM3402N
, AM3403P
, AM3405P
, AM3406
, AM3406N
, AM3407
, AM3407PE
, SKD502T
, AM3412N
, AM3413
, AM3413P
, AM3415
, AM3415A
, AM3416
, AM3422
, AM3423P
.
