SVF10N80F MOSFET Datasheet: N-Ch, 800V, 10A. Full specification with pinout and replacement list

SVF10N80F Specs and Replacement

Type Designator: SVF10N80F

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 62 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 800 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 10 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 40 nS

Cossⓘ - Output Capacitance: 151 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 1.15 Ohm

Package: TO220F

SVF10N80F substitution

- MOSFET ⓘ Cross-Reference Search

SVF10N80F datasheet

..1. Size:567K silan
svf10n80f svf10n80k.pdf pdf_icon

SVF10N80F/K 10A 800V N 2 SVF10N80F/K N MOS F-CellTM VDMOS 1 3 ... See More ⇒

8.1. Size:601K 1
svf10n65f svf10n65t.pdf pdf_icon

SVF10N65T/F_Datasheet 10A, 650V N-CHANNEL MOSFET GENERAL DESCRIPTION SVF10N65T/F is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-CellTM structure VDMOS technology. The improved planar stripe cell and the improved guard ring terminal have been especially tailored to minimize on-state resistance, provide superior switch... See More ⇒

8.2. Size:324K silan
svf10n60cafj.pdf pdf_icon