All MOSFET. SVF10N80F Datasheet

 

SVF10N80F Datasheet and Replacement


   Type Designator: SVF10N80F
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 62 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 800 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id| ⓘ - Maximum Drain Current: 10 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Qg ⓘ - Total Gate Charge: 33 nC
   tr ⓘ - Rise Time: 40 nS
   Cossⓘ - Output Capacitance: 151 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 1.15 Ohm
   Package: TO220F
 
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SVF10N80F Datasheet (PDF)

 ..1. Size:567K  silan
svf10n80f svf10n80k.pdf pdf_icon

SVF10N80F

SVF10N80F/K 10A800V N 2SVF10N80F/K N MOS F-CellTM VDMOS 13

 8.1. Size:601K  1
svf10n65f svf10n65t.pdf pdf_icon

SVF10N80F

SVF10N65T/F_Datasheet 10A, 650V N-CHANNEL MOSFET GENERAL DESCRIPTION SVF10N65T/F is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-CellTM structure VDMOS technology. Theimproved planar stripe cell and the improved guard ring terminal have been especially tailored to minimize on-state resistance, provide superior switch

 8.2. Size:324K  silan
svf10n60cafj.pdf pdf_icon

SVF10N80F

SVF10N60CAFJ 10A600V N 2SVF10N60CAFJ N MOS F-CellTM VDMOS 13 1. 2.

 8.3. Size:403K  silan
svf10n65t svf10n65f svf10n65k svf10n65s svf10n65str.pdf pdf_icon

SVF10N80F

SVF10N65T/F/K/S 10A650V N 2SVF10N65T/F/K/S N MOS F-CellTM VDMOS 1 3

Datasheet: FMM50-025TF , FMM60-02TF , FMM75-01F , FMP26-02P , FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , 5N60 , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , GMM3x180-004X2-SMD , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL .

Keywords - SVF10N80F MOSFET datasheet

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