SVF12N60T Datasheet. Specs and Replacement

Type Designator: SVF12N60T  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 225 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 12 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 51.93 nS

Cossⓘ - Output Capacitance: 152 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.75 Ohm

Package: TO220

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SVF12N60T substitution

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SVF12N60T datasheet

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SVF12N60T

SVF12N60T/F/S/K 12A 600V N SVF12N60T/F/S/K N MOS F-CellTM VDMOS AC-DC ... See More ⇒

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SVF12N60T

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SVF12N60T

SVF12N60CFJ 12A 600V N 2 SVF12N60CFJ N MOS F-CellTM VDMOS 1 3 ... See More ⇒

 6.3. Size:366K  silan
 svf12n60f svf12n60s svf12n60str svf12n60k.pdf pdf_icon

SVF12N60T

SVF12N60F/S/K 12A 600V N 2 SVF12N60F/S/K N MOS F-CellTM VDMOS 1 3 1. 2. 3... See More ⇒

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Detailed specifications: SVD9Z24NT, SVDZ24NT, SVF10N60T, SVF10N60F, SVF10N60S, SVF10N60K, SVF10N80F, SVF10N80K, IRFP260N, SVF12N60F, SVF12N60S, SVF12N60K, SVF12N65CF, SVF12N65CK, SVF12N65CS, SVF12N65CKL, SVF12N65CFQ

Keywords - SVF12N60T MOSFET specs

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