SVF12N60S Datasheet and Replacement
Type Designator: SVF12N60S
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 180 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 12 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 51.93 nS
Cossⓘ - Output Capacitance: 152 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.75 Ohm
Package: TO263
SVF12N60S substitution
SVF12N60S Datasheet (PDF)
svf12n60f svf12n60s svf12n60str svf12n60k.pdf

SVF12N60F/S/K 12A600V N 2SVF12N60F/S/K N MOS F-CellTM VDMOS 13 1. 2. 3
svf12n60t svf12n60f svf12n60s svf12n60k.pdf

SVF12N60T/F/S/K 12A600V N SVF12N60T/F/S/K N MOS F-CellTM VDMOS AC-DC
Datasheet: SVF10N60T , SVF10N60F , SVF10N60S , SVF10N60K , SVF10N80F , SVF10N80K , SVF12N60T , SVF12N60F , IRF3710 , SVF12N60K , SVF12N65CF , SVF12N65CK , SVF12N65CS , SVF12N65CKL , SVF12N65CFQ , SVF13N50T , SVF13N50F .
Keywords - SVF12N60S MOSFET datasheet
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