SVF12N60S MOSFET. Datasheet pdf. Equivalent

   Type Designator: SVF12N60S
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 180 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 12 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 33.5 nC
   trⓘ - Rise Time: 51.93 nS
   Cossⓘ - Output Capacitance: 152 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.75 Ohm
   Package: TO263

SVF12N60S Transistor Equivalent Substitute - MOSFET Cross-Reference Search

SVF12N60S Datasheet (PDF)

..1. Size:366K silan
svf12n60f svf12n60s svf12n60str svf12n60k.pdf

SVF12N60F/S/K 12A600V N 2SVF12N60F/S/K N MOS F-CellTM VDMOS 13 1. 2. 3

..2. Size:459K silan
svf12n60t svf12n60f svf12n60s svf12n60k.pdf

SVF12N60T/F/S/K 12A600V N SVF12N60T/F/S/K N MOS F-CellTM VDMOS AC-DC

6.1. Size:325K silan
svf12n60cf.pdf

SVF12N60CF 12A600V N 2SVF12N60CF N MOS F-CellTM VDMOS 1 3

6.2. Size:329K silan
svf12n60cfj.pdf

SVF12N60CFJ 12A600V N 2SVF12N60CFJ N MOS F-CellTM VDMOS 1 3

7.1. Size:586K 1
svf12n65f svf12n65t.pdf

SVF12N65T/F_Datasheet 12A, 650V N-CHANNEL MOSFET GENERAL DESCRIPTION SVF12N65T/F is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-CellTM structure VDMOS technology. Theimproved planar stripe cell and the improved guard ring terminal have been especially tailored to minimize on-state resistance, provide superior switch

7.2. Size:394K silan
svf12n65f svf12n65k svf12n65s svf12n65str.pdf