SVF12N60K MOSFET. Datasheet pdf. Equivalent
Type Designator: SVF12N60K
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 213 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id|ⓘ - Maximum Drain Current: 12 A
Tjⓘ - Maximum Junction Temperature: 150 °C
trⓘ - Rise Time: 51.93 nS
Cossⓘ - Output Capacitance: 152 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.75 Ohm
Package: TO262
SVF12N60K Transistor Equivalent Substitute - MOSFET Cross-Reference Search
SVF12N60K Datasheet (PDF)
svf12n60f svf12n60s svf12n60str svf12n60k.pdf
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SVF12N60F/S/K 12A600V N 2SVF12N60F/S/K N MOS F-CellTM VDMOS 13 1. 2. 3
svf12n60t svf12n60f svf12n60s svf12n60k.pdf
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SVF12N60T/F/S/K 12A600V N SVF12N60T/F/S/K N MOS F-CellTM VDMOS AC-DC
svf12n65f svf12n65t.pdf
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SVF12N65T/F_Datasheet 12A, 650V N-CHANNEL MOSFET GENERAL DESCRIPTION SVF12N65T/F is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-CellTM structure VDMOS technology. Theimproved planar stripe cell and the improved guard ring terminal have been especially tailored to minimize on-state resistance, provide superior switch
svf12n65f svf12n65k svf12n65s svf12n65str.pdf
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SVF12N65F/K/S 12A650V N 2SVF12N65F/K/S N MOS F-CellTM VDMOS 113 TO-263-2L3
svf12n65cf svf12n65ck svf12n65cs svf12n65ckl svf12n65cfq.pdf
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SVF12N65CF/K/S/KL/FQ 12A650V N SVF12N65CF/K/S/KL/FQ N MOS F-CellTM VDMOS A
svf12n65t svf12n65f.pdf
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SVF12N65T/F 12A650V N 2SVF12N65T/F NMOSF-CellTMVDMOS 1 3
Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , MMIS60R580P , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .