All MOSFET. MNT-LB32N20 Datasheet

 

MNT-LB32N20 MOSFET. Datasheet pdf. Equivalent


   Type Designator: MNT-LB32N20
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 500 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
   |Vgs(off)|ⓘ - Minimum Gate-to-Source Cutoff Voltage: 0.1 V
   |Id|ⓘ - Maximum Drain Current: 32 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.2 Ohm
   Package: SMARTC2

 MNT-LB32N20 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

MNT-LB32N20 Datasheet (PDF)

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 mnt-lb32n16 mnt-lb32n20.pdf

MNT-LB32N20 MNT-LB32N20

MNT - LB32N16 MNT - LB32N20 MECHANICAL DATADimensions in mmSMARTPACK POWER MODULE24.010.5POWER MOSFETS FOR AUDIO APPLICATIONSFEATURES N - CHANNEL POWER MOSFETS 4.25 HIGH SPEED SWITCHING SEMEFAB DESIGNED AND DIFFUSED HIGH VOLTAGE (160V & 200V) HIGH ENERGY RATING43.5 ENHANCEMENT MODECASE 2 INTEGRAL PROTECTION DIODE P - CHANNEL AVAI

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
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