All MOSFET. MNT-LB32N20-C4 Datasheet

 

MNT-LB32N20-C4 Datasheet and Replacement


   Type Designator: MNT-LB32N20-C4
   Type of Transistor: MOSFET
   Type of Control Channel: NP -Channel
   Pd ⓘ - Maximum Power Dissipation: 500 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
   |Id| ⓘ - Maximum Drain Current: 32 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.2 Ohm
   Package: SMARTC4
 

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MNT-LB32N20-C4 Datasheet (PDF)

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MNT-LB32N20-C4

MNT - LB32N16 MNT - LB32N20 MECHANICAL DATADimensions in mmSMARTPACK POWER MODULE24.010.5POWER MOSFETS FOR AUDIO APPLICATIONSFEATURES N - CHANNEL POWER MOSFETS 4.25 HIGH SPEED SWITCHING SEMEFAB DESIGNED AND DIFFUSED HIGH VOLTAGE (160V & 200V) HIGH ENERGY RATING43.5 ENHANCEMENT MODECASE 2 INTEGRAL PROTECTION DIODE P - CHANNEL AVAI

Datasheet: MEM554C , MEM564C , MEM610 , MEM614 , MMBF170 , MNT-LB32N16 , MNT-LB32N16-C4 , MNT-LB32N20 , STP80NF70 , MTB30N06VL , MTB30P06V , MTB35N06ZL , MTP10N10M , MTP3055E , MTP3055EFI , MTP30N05E , MTP30N08M .

History: IXTH24N50Q | SRK7002LT1 | STS2307 | FDMS2734

Keywords - MNT-LB32N20-C4 MOSFET datasheet

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