SVF1N60AD Specs and Replacement

Type Designator: SVF1N60AD

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 28 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 1 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 11.9 nS

Cossⓘ - Output Capacitance: 23.4 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 8.1 Ohm

Package: TO252

SVF1N60AD substitution

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SVF1N60AD datasheet

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 svf1n60am svf1n60amj svf1n60ab svf1n60ad svf1n60af svf1n60ah.pdf pdf_icon

SVF1N60AD

SVF1N60AM/MJ/B/D/F/H 1A 600V N 2 1 2 3 SVF1N60AM/MJ/B/D/F/H N MOS TO-251D-3L F-CellTM VDMOS 1 1 3 2 3 ... See More ⇒

 7.1. Size:606K  silan
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SVF1N60AD

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Detailed specifications: SVF18N50PN, SVF18N50FJ, SVF18N65F, SVF18N65T, SVF18N65PN, SVF1N60AM, SVF1N60AMJ, SVF1N60AB, K3569, SVF1N60AF, SVF1N60AH, SVF1N60M, SVF1N60MJ, SVF1N60N, SVF1N60B, SVF1N60D, SVF20N60F

Keywords - SVF1N60AD MOSFET specs

 SVF1N60AD cross reference

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Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs