All MOSFET. SVF2N60NF Datasheet

 

SVF2N60NF Datasheet and Replacement


   Type Designator: SVF2N60NF
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 16 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 2 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 23 nS
   Cossⓘ - Output Capacitance: 32 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 4.2 Ohm
   Package: TO126F
 

 SVF2N60NF substitution

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SVF2N60NF Datasheet (PDF)

 ..1. Size:692K  silan
 svf2n60m svf2n60mj svf2n60nf svf2n60f svf2n60d.pdf pdf_icon

SVF2N60NF

SVF2N60M(MJ)(NF)(F)(D) 2A600V N 2SVF2N60M(MJ)(NF)(F)(D) N MOS 1 F-CellTM VDMOS 123 3TO-126F-3L

 ..2. Size:362K  silan
 svf2n60nf svf2n60f.pdf pdf_icon

SVF2N60NF

SVF2N60NF(F) 2A600V N 2SVF2N60NF(F) N MOS F-CellTM VDMOS 1 3

 ..3. Size:519K  silan
 svf2n60m svf2n60mj svf2n60n svf2n60nf svf2n60f svf2n60t svf2n60d.pdf pdf_icon

SVF2N60NF

SVF2N60M/MJ/N/NF/F/T/D_Datasheet 2A, 600V N-CHANNEL MOSFET GENERAL DESCRIPTION 2SVF2N60M(MJ)(N)(NF)(F)(T)(D) is an N-channel enhancement mode 13TO-252-2Lpower MOS field effect transistor which is produced using Silan 1proprietary F-CellTM structure VDMOS technology. The improved 31process and cell structure have been especially tailored to minimize 231.Gate 2.Dra

 6.1. Size:600K  silan
 svf2n60m svf2n60mj svf2n60n svf2n60f svf2n60t svf2n60d.pdf pdf_icon

SVF2N60NF

SVF2N60M/MJ/N/F/T/D 2A600V N SVF2N60M/MJ/N/F/T/D NMOSF-CellTMVDMOS

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Datasheet: SVF2N60CN , SVF2N60CNF , SVF2N60CM , SVF2N60CMJ , SVF2N60CF , SVF2N60CD , SVF2N60MJ , SVF2N60N , IRFZ24N , SVF2N60RD , SVF2N60RM , SVF2N60RMJ , SVF2N65N , SVF2N65MJ , SVF2N65D , SVF2N70M , SVF2N70MJ .

History: PMDPB80XP | SVD2N60M | KVN4424Z | RJK0394DPA | RHK003N06T146 | FTK4N70D | IPA041N04NG

Keywords - SVF2N60NF MOSFET datasheet

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