MTB35N06ZL PDF and Equivalents Search

 

MTB35N06ZL Specs and Replacement

Type Designator: MTB35N06ZL

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 94 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 15 V

|Id| ⓘ - Maximum Drain Current: 35 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

Cossⓘ - Output Capacitance: 1600 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.026 Ohm

Package: D2PAK

MTB35N06ZL substitution

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MTB35N06ZL datasheet

 ..1. Size:104K  motorola
 mtb35n06zl.pdf pdf_icon

MTB35N06ZL

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MTB35N06ZL/D Product Preview MTB35N06ZL HDTMOS E-FET. High Energy Power FET D2PAK for Surface Mount TMOS POWER FET N Channel Enhancement Mode Silicon Gate 35 AMPERES 60 VOLTS This advanced high voltage TMOS E FET is designed to RDS(on) = 26 m withstand high energy in the avalanche mode and switch efficiently.... See More ⇒

 7.1. Size:259K  cystek
 mtb35n04j3.pdf pdf_icon

MTB35N06ZL

Spec. No. C453J3 Issued Date 2009.03.11 CYStech Electronics Corp. Revised Date Page No. 1/7 N -Channel Enhancement Mode Power MOSFET BVDSS 40V MTB35N04J3 ID 12A 35m RDSON(MAX) Features Low Gate Charge Simple Drive Requirement RoHS compliant & Halogen-free package Equivalent Circuit Outline MTB35N04J3 TO-252 G D S G Gate D Drain S S... See More ⇒

Detailed specifications: MEM614, MMBF170, MNT-LB32N16, MNT-LB32N16-C4, MNT-LB32N20, MNT-LB32N20-C4, MTB30N06VL, MTB30P06V, SI2302, MTP10N10M, MTP3055E, MTP3055EFI, MTP30N05E, MTP30N08M, MTP3N50E, MTP3N60, MTP3N60FI

Keywords - MTB35N06ZL MOSFET specs

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