TSM210N06CZ Specs and Replacement

Type Designator: TSM210N06CZ

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 250 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 210 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 40 nS

Cossⓘ - Output Capacitance: 780 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0031 Ohm

Package: TO-220

TSM210N06CZ substitution

- MOSFET ⓘ Cross-Reference Search

 

TSM210N06CZ datasheet

 ..1. Size:62K  taiwansemi
 tsm210n06cz.pdf pdf_icon

TSM210N06CZ

TSM210N06 60V N-Channel Power MOSFET TO-220 Pin Definition PRODUCT SUMMARY 1. Gate VDS (V) RDS(on)(m ) ID (A) 2. Drain 3. Source 60 3.1 @ VGS =10V 210 Features Block Diagram Advanced Trench Technology Low RDS(ON) 3.1m (Max.) Low gate charge typical @ 160nC (Typ.) Low Crss typical @ 300pF (Typ.) Ordering Information Part No. Package Packing ... See More ⇒

Detailed specifications: TSM1N80CW, TSM1N80SCT, TSM1NB60CH, TSM1NB60CP, TSM1NB60CW, TSM1NB60SCT, TSM20N50CI, TSM20N50CZ, 7N60, TSM2301ACX, TSM2301BCX, TSM2301CX, TSM2302CX, TSM2303CX, TSM2305CX, TSM2306CX, TSM2307CX

Keywords - TSM210N06CZ MOSFET specs

 TSM210N06CZ cross reference

 TSM210N06CZ equivalent finder

 TSM210N06CZ pdf lookup

 TSM210N06CZ substitution

 TSM210N06CZ replacement

Can't find your MOSFET? Learn how to find a substitute transistor by analyzing voltage, current and package compatibility