All MOSFET. TSM210N06CZ Datasheet

 

TSM210N06CZ MOSFET. Datasheet pdf. Equivalent


   Type Designator: TSM210N06CZ
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 250 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 210 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 160 nC
   trⓘ - Rise Time: 40 nS
   Cossⓘ - Output Capacitance: 780 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0031 Ohm
   Package: TO-220

 TSM210N06CZ Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

TSM210N06CZ Datasheet (PDF)

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 tsm210n06cz.pdf

TSM210N06CZ TSM210N06CZ

TSM210N06 60V N-Channel Power MOSFET TO-220 Pin Definition: PRODUCT SUMMARY 1. Gate VDS (V) RDS(on)(m) ID (A) 2. Drain 3. Source 60 3.1 @ VGS =10V 210 Features Block Diagram Advanced Trench Technology Low RDS(ON) 3.1m (Max.) Low gate charge typical @ 160nC (Typ.) Low Crss typical @ 300pF (Typ.) Ordering Information Part No. Package Packing

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History: TSM2301ACX | AP95T07AGP-HF | 2SK1335S

 

 
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