All MOSFET. TSM210N06CZ Datasheet

 

TSM210N06CZ Datasheet and Replacement


   Type Designator: TSM210N06CZ
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 250 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 210 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 40 nS
   Cossⓘ - Output Capacitance: 780 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0031 Ohm
   Package: TO-220
 

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TSM210N06CZ Datasheet (PDF)

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TSM210N06CZ

TSM210N06 60V N-Channel Power MOSFET TO-220 Pin Definition: PRODUCT SUMMARY 1. Gate VDS (V) RDS(on)(m) ID (A) 2. Drain 3. Source 60 3.1 @ VGS =10V 210 Features Block Diagram Advanced Trench Technology Low RDS(ON) 3.1m (Max.) Low gate charge typical @ 160nC (Typ.) Low Crss typical @ 300pF (Typ.) Ordering Information Part No. Package Packing

Datasheet: TSM1N80CW , TSM1N80SCT , TSM1NB60CH , TSM1NB60CP , TSM1NB60CW , TSM1NB60SCT , TSM20N50CI , TSM20N50CZ , MMIS60R580P , TSM2301ACX , TSM2301BCX , TSM2301CX , TSM2302CX , TSM2303CX , TSM2305CX , TSM2306CX , TSM2307CX .

History: P2804HVG | UPA1913 | VBL2625 | SVS7N60DD2TR | STD60NF3LLT4 | SUD50N02-06P | P3606BEA

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