TSM210N06CZ Datasheet and Replacement
Type Designator: TSM210N06CZ
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 250 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 210 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 40 nS
Cossⓘ - Output Capacitance: 780 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0031 Ohm
Package: TO-220
TSM210N06CZ substitution
TSM210N06CZ Datasheet (PDF)
tsm210n06cz.pdf

TSM210N06 60V N-Channel Power MOSFET TO-220 Pin Definition: PRODUCT SUMMARY 1. Gate VDS (V) RDS(on)(m) ID (A) 2. Drain 3. Source 60 3.1 @ VGS =10V 210 Features Block Diagram Advanced Trench Technology Low RDS(ON) 3.1m (Max.) Low gate charge typical @ 160nC (Typ.) Low Crss typical @ 300pF (Typ.) Ordering Information Part No. Package Packing
Datasheet: TSM1N80CW , TSM1N80SCT , TSM1NB60CH , TSM1NB60CP , TSM1NB60CW , TSM1NB60SCT , TSM20N50CI , TSM20N50CZ , IRF830 , TSM2301ACX , TSM2301BCX , TSM2301CX , TSM2302CX , TSM2303CX , TSM2305CX , TSM2306CX , TSM2307CX .
History: AP92T03GH-HF
Keywords - TSM210N06CZ MOSFET datasheet
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History: AP92T03GH-HF



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