All MOSFET. TSM2611EDCX6 Datasheet

 

TSM2611EDCX6 Datasheet and Replacement


   Type Designator: TSM2611EDCX6
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 0.83 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 10 V
   |Id| ⓘ - Maximum Drain Current: 6 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 12 nS
   Cossⓘ - Output Capacitance: 144 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.02 Ohm
   Package: SOT-26
 

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TSM2611EDCX6 Datasheet (PDF)

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TSM2611EDCX6

TSM2611ED 20V Dual N-Channel MOSFET w/ESD Protected SOT-26 Pin Definition: PRODUCT SUMMARY 1. Source 1 6. Gate 1 VDS (V) RDS(on)(m) ID (A) 2. Drain 1 5. Drain 2 3. Source 2 4. Gate 2 20 @ VGS = 4.5V 6 20 28 @ VGS = 2.5V 5 Features Block Diagram Advance Trench Process Technology High Density Cell Design for Ultra Low On resistance ESD Protected HBM

Datasheet: TSM2312CX , TSM2313CX , TSM2314CX , TSM2318CX , TSM2323CX , TSM2328CX , TSM23N50CN , TSM25N03CP , IRF740 , TSM2N60CH , TSM2N60CP , TSM2N60CZ , TSM2N60SCW , TSM2N7000KCT , TSM2N7002KCU , TSM2N7002KCX , TSM2N7002KDCU6 .

History: CET6601 | CES2313 | DMG4712SSS | CES2301 | CET4435A | CES2307 | CEU05P03

Keywords - TSM2611EDCX6 MOSFET datasheet

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