TSM2611EDCX6 Datasheet and Replacement
Type Designator: TSM2611EDCX6
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 0.83 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 10 V
|Id| ⓘ - Maximum Drain Current: 6 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 12 nS
Cossⓘ - Output Capacitance: 144 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.02 Ohm
Package: SOT-26
TSM2611EDCX6 substitution
TSM2611EDCX6 Datasheet (PDF)
tsm2611edcx6.pdf

TSM2611ED 20V Dual N-Channel MOSFET w/ESD Protected SOT-26 Pin Definition: PRODUCT SUMMARY 1. Source 1 6. Gate 1 VDS (V) RDS(on)(m) ID (A) 2. Drain 1 5. Drain 2 3. Source 2 4. Gate 2 20 @ VGS = 4.5V 6 20 28 @ VGS = 2.5V 5 Features Block Diagram Advance Trench Process Technology High Density Cell Design for Ultra Low On resistance ESD Protected HBM
Datasheet: TSM2312CX , TSM2313CX , TSM2314CX , TSM2318CX , TSM2323CX , TSM2328CX , TSM23N50CN , TSM25N03CP , IRF740 , TSM2N60CH , TSM2N60CP , TSM2N60CZ , TSM2N60SCW , TSM2N7000KCT , TSM2N7002KCU , TSM2N7002KCX , TSM2N7002KDCU6 .
Keywords - TSM2611EDCX6 MOSFET datasheet
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History: VS6038AD | AO6801E



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