TSM2611EDCX6 Specs and Replacement

Type Designator: TSM2611EDCX6

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 0.83 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 10 V

|Id| ⓘ - Maximum Drain Current: 6 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 12 nS

Cossⓘ - Output Capacitance: 144 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.02 Ohm

Package: SOT-26

TSM2611EDCX6 substitution

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TSM2611EDCX6 datasheet

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TSM2611EDCX6

TSM2611ED 20V Dual N-Channel MOSFET w/ESD Protected SOT-26 Pin Definition PRODUCT SUMMARY 1. Source 1 6. Gate 1 VDS (V) RDS(on)(m ) ID (A) 2. Drain 1 5. Drain 2 3. Source 2 4. Gate 2 20 @ VGS = 4.5V 6 20 28 @ VGS = 2.5V 5 Features Block Diagram Advance Trench Process Technology High Density Cell Design for Ultra Low On resistance ESD Protected HBM ... See More ⇒

Detailed specifications: TSM2312CX, TSM2313CX, TSM2314CX, TSM2318CX, TSM2323CX, TSM2328CX, TSM23N50CN, TSM25N03CP, IRF740, TSM2N60CH, TSM2N60CP, TSM2N60CZ, TSM2N60SCW, TSM2N7000KCT, TSM2N7002KCU, TSM2N7002KCX, TSM2N7002KDCU6

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