All MOSFET. TSM301K12CQ Datasheet

 

TSM301K12CQ Datasheet and Replacement


   Type Designator: TSM301K12CQ
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 6.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Id| ⓘ - Maximum Drain Current: 4.5 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 295 nS
   Cossⓘ - Output Capacitance: 9.7 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.094 Ohm
   Package: TDFN2X2
 

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TSM301K12CQ Datasheet (PDF)

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TSM301K12CQ

TSM301K12 20V P-Channel MOSFET with Schottky Diode TDFN 2x2 PRODUCT SUMMARY Pin Definition: 1. Anode 6. Cathode VDS (V) RDS(on)(m) ID (A) 2. NC 5. Gate 3. Drain 4. Source 94 @ VGS = -4.5V -2.8 -20 131 @ VGS = -2.5V -2.3 185 @ VGS = -1.8V -0.54 SCHOTTKY PRODUCT SUMMARY VR (V) VF (V) IF (A) 20 0.5 2 Block Diagram Features Configuration with MOSFET and L

Datasheet: TSM2N7002KDCU6 , TSM2N70CH , TSM2N70CP , TSM2N70CZ , TSM2NB60CH , TSM2NB60CI , TSM2NB60CP , TSM2NB60CZ , P55NF06 , TSM3400CX , TSM3401CX , TSM3404CX , TSM3424CX6 , TSM3433CX6 , TSM3441CX6 , TSM3442CX6 , TSM3443CX6 .

History: 2SK1614 | SI2303CDS | BL3N150-P | JCS18N25VC | IXTM4N100A | NCEAP15ND10AG | IXFN82N60Q3

Keywords - TSM301K12CQ MOSFET datasheet

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