TSM301K12CQ MOSFET. Datasheet pdf. Equivalent
Type Designator: TSM301K12CQ
Marking Code: 3K12*
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pdⓘ - Maximum Power Dissipation: 6.5 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 0.5 V
|Id|ⓘ - Maximum Drain Current: 4.5 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 5.2 nC
trⓘ - Rise Time: 295 nS
Cossⓘ - Output Capacitance: 9.7 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.094 Ohm
Package: TDFN2X2
TSM301K12CQ Transistor Equivalent Substitute - MOSFET Cross-Reference Search
TSM301K12CQ Datasheet (PDF)
..1. Size:410K taiwansemi
tsm301k12cq.pdf
tsm301k12cq.pdf
TSM301K12 20V P-Channel MOSFET with Schottky Diode TDFN 2x2 PRODUCT SUMMARY Pin Definition: 1. Anode 6. Cathode VDS (V) RDS(on)(m) ID (A) 2. NC 5. Gate 3. Drain 4. Source 94 @ VGS = -4.5V -2.8 -20 131 @ VGS = -2.5V -2.3 185 @ VGS = -1.8V -0.54 SCHOTTKY PRODUCT SUMMARY VR (V) VF (V) IF (A) 20 0.5 2 Block Diagram Features Configuration with MOSFET and L
Datasheet: FMM50-025TF , FMM60-02TF , FMM75-01F , FMP26-02P , FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , AON7410 , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , GMM3x180-004X2-SMD , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL .
