MTP3N60 Datasheet and Replacement
Type Designator: MTP3N60
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 100 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4.5 V
|Id| ⓘ - Maximum Drain Current: 3.9 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Qg ⓘ - Total Gate Charge: 43 nC
Cossⓘ - Output Capacitance: 800 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 2.5 Ohm
Package: TO220
MTP3N60 substitution
MTP3N60 Datasheet (PDF)
mtp3n60.pdf
MTP3N60MTP3N60FIN - CHANNEL ENHANCEMENT MODEPOWER MOS TRANSISTORTYPE V R IDSS DS(on) DMTP3N60 600 V
mtp3n60e.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MTP3N60E/DDesigner's Data SheetMTP3N60ETMOS E-FET.Motorola Preferred DeviceHigh Energy Power FETNChannel EnhancementMode Silicon GateTMOS POWER FETThis advanced high voltage TMOS EFET is designed to3.0 AMPERESwithstand high energy in the avalanche mode and switch efficiently.600 VOLTSThis new
mtp3n60erev2.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MTP3N60E/DDesigner's Data SheetMTP3N60ETMOS E-FET.Motorola Preferred DeviceHigh Energy Power FETNChannel EnhancementMode Silicon GateTMOS POWER FETThis advanced high voltage TMOS EFET is designed to3.0 AMPERESwithstand high energy in the avalanche mode and switch efficiently.600 VOLTSThis new
Datasheet: MTB30P06V , MTB35N06ZL , MTP10N10M , MTP3055E , MTP3055EFI , MTP30N05E , MTP30N08M , MTP3N50E , AON6380 , MTP3N60FI , MTP6N60 , NDB4050 , NDB4050L , NDB4060 , NDB4060L , NDB408A , NDB410A .
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