TSM5ND50CH MOSFET. Datasheet pdf. Equivalent
Type Designator: TSM5ND50CH
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 70 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4.8 V
|Id|ⓘ - Maximum Drain Current: 4.4 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 20 nC
trⓘ - Rise Time: 11.7 nS
Cossⓘ - Output Capacitance: 75 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 1.5 Ohm
Package: TO-251
TSM5ND50CH Transistor Equivalent Substitute - MOSFET Cross-Reference Search
TSM5ND50CH Datasheet (PDF)
tsm5nd50ch tsm5nd50cp.pdf
TSM5ND50 500V N-Channel Power MOSFET TO-251 TO-252 Pin Definition: PRODUCT SUMMARY (IPAK) (DPAK) 1. Gate VDS (V) RDS(on)() ID (A) 2. Drain 3. Source 500 1.5 @ VGS =10V 2.2 General Description The TSM5ND50 N-Channel enhancement mode Power MOSFET is produced by planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state res
tsm5nb50cz.pdf
TSM5NB50 500V N-Channel Power MOSFET TO-220 ITO-220 Pin Definition: PRODUCT SUMMARY 1. Gate VDS (V) RDS(on)() ID (A) 2. Drain 3. Source 500 1.5 @ VGS =10V 4.4 General Description The TSM5NB50 N-Channel Power MOSFET is TO-251 TO-252 (IPAK) (DPAK) produced by new advance planar process. This advanced technology has been especially tailored to minimize on-state re
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