All MOSFET. TSM6866SDCA Datasheet

 

TSM6866SDCA MOSFET. Datasheet pdf. Equivalent


   Type Designator: TSM6866SDCA
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 1.6 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 0.6 V
   |Id|ⓘ - Maximum Drain Current: 6 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 5 nC
   trⓘ - Rise Time: 10 nS
   Cossⓘ - Output Capacitance: 105 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.03 Ohm
   Package: TSSOP-8

 TSM6866SDCA Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

TSM6866SDCA Datasheet (PDF)

 ..1. Size:208K  taiwansemi
 tsm6866sdca.pdf

TSM6866SDCA TSM6866SDCA

TSM6866SD 20V Dual N-Channel MOSFET TSSOP-8 PRODUCT SUMMARY Pin Definition: 1. Drain 1 8. Drain 2 VDS (V) RDS(on)(m) ID (A) 2. Source 1 7. Source 2 3. Source 1 6. Source 2 30 @ VGS = 4.5V 6.0 20 4. Gate 1 5. Gate 2 40 @ VGS = 2.5V 5.2 Features Block Diagram Advance Trench Process Technology High Density Cell Design for Ultra Low On-resistance Applica

 7.1. Size:391K  taiwansemi
 tsm6866dca.pdf

TSM6866SDCA TSM6866SDCA

TSM6866D 20V Dual N-Channel MOSFET PRODUCT SUMMARY TSSOP-8 Pin Definition: VDS (V) RDS(on)(m) ID (A) 1. Drain 1 8. Drain 2 2. Source 1 7. Source 2 30 @ VGS = 4.5V 6.0 3. Source 1 6. Source 2 20 4. Gate 1 5. Gate 2 40 @ VGS = 2.5V 5.2 Features Block Diagram Advance Trench Process Technology High Density Cell Design for Ultra Low On-resistance Applica

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
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