All MOSFET. TSM6N50CH Datasheet

 

TSM6N50CH MOSFET. Datasheet pdf. Equivalent

Type Designator: TSM6N50CH

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 90 W

Maximum Drain-Source Voltage |Vds|: 500 V

Maximum Gate-Source Voltage |Vgs|: 30 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V

Maximum Drain Current |Id|: 5.6 A

Maximum Junction Temperature (Tj): 150 °C

Total Gate Charge (Qg): 25 nC

Rise Time (tr): 40 nS

Drain-Source Capacitance (Cd): 85 pF

Maximum Drain-Source On-State Resistance (Rds): 1.4 Ohm

Package: TO-251

TSM6N50CH Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

TSM6N50CH Datasheet (PDF)

0.1. tsm6n50ch tsm6n50ci tsm6n50cp.pdf Size:374K _taiwansemi

TSM6N50CH
TSM6N50CH

 TSM6N50 500V N-Channel Power MOSFET ITO-220 TO-252 TO-251 Pin Definition: PRODUCT SUMMARY (DPAK) (IPAK) 1. Gate VDS (V) RDS(on)(Ω) ID (A) 2. Drain 3. Source 500 1.4 @ VGS =10V 2.8 General Description The TSM6N50 N-Channel enhancement mode Power MOSFET is produced by planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-s

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , J310 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
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