TSM6N50CH Datasheet. Specs and Replacement

Type Designator: TSM6N50CH  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 90 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 5.6 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 40 nS

Cossⓘ - Output Capacitance: 85 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 1.4 Ohm

Package: TO-251

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TSM6N50CH datasheet

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TSM6N50CH

TSM6N50 500V N-Channel Power MOSFET ITO-220 TO-252 TO-251 Pin Definition PRODUCT SUMMARY (DPAK) (IPAK) 1. Gate VDS (V) RDS(on)( ) ID (A) 2. Drain 3. Source 500 1.4 @ VGS =10V 2.8 General Description The TSM6N50 N-Channel enhancement mode Power MOSFET is produced by planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-s... See More ⇒

Detailed specifications: TSM60N06CP, TSM6866DCA, TSM6866SDCA, TSM6963SDCA, TSM6968DCA, TSM6968SDCA, TSM6981DCA, TSM6988DCX6, IRF740, TSM6N50CI, TSM6N50CP, TSM70N10CP, TSM7401CS, TSM75N03CP, TSM75N75CZ, TSM7900DCQ, TSM7N60CI

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