TSM6N50CH Datasheet and Replacement
Type Designator: TSM6N50CH
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 90 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 5.6 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 40 nS
Cossⓘ - Output Capacitance: 85 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 1.4 Ohm
Package: TO-251
TSM6N50CH substitution
TSM6N50CH Datasheet (PDF)
tsm6n50ch tsm6n50ci tsm6n50cp.pdf

TSM6N50 500V N-Channel Power MOSFET ITO-220 TO-252 TO-251 Pin Definition: PRODUCT SUMMARY (DPAK) (IPAK) 1. Gate VDS (V) RDS(on)() ID (A) 2. Drain 3. Source 500 1.4 @ VGS =10V 2.8 General Description The TSM6N50 N-Channel enhancement mode Power MOSFET is produced by planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-s
Datasheet: TSM60N06CP , TSM6866DCA , TSM6866SDCA , TSM6963SDCA , TSM6968DCA , TSM6968SDCA , TSM6981DCA , TSM6988DCX6 , IRF740 , TSM6N50CI , TSM6N50CP , TSM70N10CP , TSM7401CS , TSM75N03CP , TSM75N75CZ , TSM7900DCQ , TSM7N60CI .
History: MPG40P10P
Keywords - TSM6N50CH MOSFET datasheet
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History: MPG40P10P



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