TSM6N50CH MOSFET. Datasheet pdf. Equivalent
Type Designator: TSM6N50CH
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 90 W
Maximum Drain-Source Voltage |Vds|: 500 V
Maximum Gate-Source Voltage |Vgs|: 30 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V
Maximum Drain Current |Id|: 5.6 A
Maximum Junction Temperature (Tj): 150 °C
Total Gate Charge (Qg): 25 nC
Rise Time (tr): 40 nS
Drain-Source Capacitance (Cd): 85 pF
Maximum Drain-Source On-State Resistance (Rds): 1.4 Ohm
Package: TO-251
TSM6N50CH Transistor Equivalent Substitute - MOSFET Cross-Reference Search
TSM6N50CH Datasheet (PDF)
0.1. tsm6n50ch tsm6n50ci tsm6n50cp.pdf 
Size:374K _taiwansemi
TSM6N50 500V N-Channel Power MOSFET ITO-220 TO-252 TO-251 Pin Definition: PRODUCT SUMMARY (DPAK) (IPAK) 1. Gate VDS (V) RDS(on)(Ω) ID (A) 2. Drain 3. Source 500 1.4 @ VGS =10V 2.8 General Description The TSM6N50 N-Channel enhancement mode Power MOSFET is produced by planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-s
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