All MOSFET. TSM6N50CI Datasheet

 

TSM6N50CI MOSFET. Datasheet pdf. Equivalent


   Type Designator: TSM6N50CI
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 25 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 5.6 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 25 nC
   trⓘ - Rise Time: 40 nS
   Cossⓘ - Output Capacitance: 85 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 1.4 Ohm
   Package: ITO-220

 TSM6N50CI Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

TSM6N50CI Datasheet (PDF)

 ..1. Size:374K  taiwansemi
 tsm6n50ch tsm6n50ci tsm6n50cp.pdf

TSM6N50CI TSM6N50CI

TSM6N50 500V N-Channel Power MOSFET ITO-220 TO-252 TO-251 Pin Definition: PRODUCT SUMMARY (DPAK) (IPAK) 1. Gate VDS (V) RDS(on)() ID (A) 2. Drain 3. Source 500 1.4 @ VGS =10V 2.8 General Description The TSM6N50 N-Channel enhancement mode Power MOSFET is produced by planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-s

Datasheet: WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRLB4132 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .

 

 
Back to Top