TSM6N50CI PDF and Equivalents Search

 

TSM6N50CI Specs and Replacement


   Type Designator: TSM6N50CI
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel

Absolute Maximum Ratings


   Pd ⓘ - Maximum Power Dissipation: 25 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 5.6 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics


   tr ⓘ - Rise Time: 40 nS
   Cossⓘ - Output Capacitance: 85 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 1.4 Ohm
   Package: ITO-220
 

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TSM6N50CI datasheet

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TSM6N50CI

TSM6N50 500V N-Channel Power MOSFET ITO-220 TO-252 TO-251 Pin Definition PRODUCT SUMMARY (DPAK) (IPAK) 1. Gate VDS (V) RDS(on)( ) ID (A) 2. Drain 3. Source 500 1.4 @ VGS =10V 2.8 General Description The TSM6N50 N-Channel enhancement mode Power MOSFET is produced by planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-s... See More ⇒

Detailed specifications: TSM6866DCA , TSM6866SDCA , TSM6963SDCA , TSM6968DCA , TSM6968SDCA , TSM6981DCA , TSM6988DCX6 , TSM6N50CH , IRF840 , TSM6N50CP , TSM70N10CP , TSM7401CS , TSM75N03CP , TSM75N75CZ , TSM7900DCQ , TSM7N60CI , TSM7N60CZ .

History: PT530BA | SWN7N65DA | IXTX40P50P | PTA15N50 | IXTU5N50P | 7N65L-TF3T-T | P0260ETF

Keywords - TSM6N50CI MOSFET specs

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