All MOSFET. TSM7900DCQ Datasheet

 

TSM7900DCQ Datasheet and Replacement


   Type Designator: TSM7900DCQ
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 1.25 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Id|ⓘ - Maximum Drain Current: 6 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 210 nS
   Cossⓘ - Output Capacitance: 450 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.035 Ohm
   Package: TDFN3X3
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TSM7900DCQ Datasheet (PDF)

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TSM7900DCQ

TSM7900D 20V Dual N-Channel MOSFET w/ESD Protected PRODUCT SUMMARY TDFN 3x3 Pin Definition: 1. Source 1 VDS (V) RDS(on)(m) ID (A) 2. Gate 1 3. Source 2 32 @ VGS = 4.5V 6.5 4. Gate 2 20 40 @ VGS = 2.5V 5.0 5, 6, 7, 8. Drain Features Block Diagram Advance Trench Process Technology High Density Cell Design for Ultra Low On-resistance ESD Protect

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

History: AO4588 | HLML6401 | NTMSD3P102R2 | NVD14N03R | TK20S04K3L | IRLR8726 | AP85T03GH-HF

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