All MOSFET. TSM7900DCQ Datasheet

 

TSM7900DCQ MOSFET. Datasheet pdf. Equivalent


   Type Designator: TSM7900DCQ
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 1.25 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1 V
   |Id|ⓘ - Maximum Drain Current: 6 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 15 nC
   trⓘ - Rise Time: 210 nS
   Cossⓘ - Output Capacitance: 450 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.035 Ohm
   Package: TDFN3X3

 TSM7900DCQ Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

TSM7900DCQ Datasheet (PDF)

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 tsm7900dcq.pdf

TSM7900DCQ TSM7900DCQ

TSM7900D 20V Dual N-Channel MOSFET w/ESD Protected PRODUCT SUMMARY TDFN 3x3 Pin Definition: 1. Source 1 VDS (V) RDS(on)(m) ID (A) 2. Gate 1 3. Source 2 32 @ VGS = 4.5V 6.5 4. Gate 2 20 40 @ VGS = 2.5V 5.0 5, 6, 7, 8. Drain Features Block Diagram Advance Trench Process Technology High Density Cell Design for Ultra Low On-resistance ESD Protect

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