TSM7900DCQ PDF and Equivalents Search

 

TSM7900DCQ Specs and Replacement

Type Designator: TSM7900DCQ

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1.25 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V

|Id| ⓘ - Maximum Drain Current: 6 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 210 nS

Cossⓘ - Output Capacitance: 450 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.035 Ohm

Package: TDFN3X3

TSM7900DCQ substitution

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TSM7900DCQ datasheet

 ..1. Size:341K  taiwansemi
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TSM7900DCQ

TSM7900D 20V Dual N-Channel MOSFET w/ESD Protected PRODUCT SUMMARY TDFN 3x3 Pin Definition 1. Source 1 VDS (V) RDS(on)(m ) ID (A) 2. Gate 1 3. Source 2 32 @ VGS = 4.5V 6.5 4. Gate 2 20 40 @ VGS = 2.5V 5.0 5, 6, 7, 8. Drain Features Block Diagram Advance Trench Process Technology High Density Cell Design for Ultra Low On-resistance ESD Protect ... See More ⇒

Detailed specifications: TSM6988DCX6, TSM6N50CH, TSM6N50CI, TSM6N50CP, TSM70N10CP, TSM7401CS, TSM75N03CP, TSM75N75CZ, IRFZ44, TSM7N60CI, TSM7N60CZ, TSM7N65CI, TSM7N65CZ, TSM7N90CI, TSM7N90CZ, TSM802CQ, TSM80N08CZ

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