All MOSFET. TSM7900DCQ Datasheet

 

TSM7900DCQ Datasheet and Replacement


   Type Designator: TSM7900DCQ
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 1.25 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Id| ⓘ - Maximum Drain Current: 6 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 210 nS
   Cossⓘ - Output Capacitance: 450 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.035 Ohm
   Package: TDFN3X3
 

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TSM7900DCQ Datasheet (PDF)

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TSM7900DCQ

TSM7900D 20V Dual N-Channel MOSFET w/ESD Protected PRODUCT SUMMARY TDFN 3x3 Pin Definition: 1. Source 1 VDS (V) RDS(on)(m) ID (A) 2. Gate 1 3. Source 2 32 @ VGS = 4.5V 6.5 4. Gate 2 20 40 @ VGS = 2.5V 5.0 5, 6, 7, 8. Drain Features Block Diagram Advance Trench Process Technology High Density Cell Design for Ultra Low On-resistance ESD Protect

Datasheet: TSM6988DCX6 , TSM6N50CH , TSM6N50CI , TSM6N50CP , TSM70N10CP , TSM7401CS , TSM75N03CP , TSM75N75CZ , IRFZ44 , TSM7N60CI , TSM7N60CZ , TSM7N65CI , TSM7N65CZ , TSM7N90CI , TSM7N90CZ , TSM802CQ , TSM80N08CZ .

History: TSF9N90M | IPP65R660CFD | NVD14N03R | MIC94052BC6TR | GSM9435WS | APT20M18B2VRG | APT14F100B

Keywords - TSM7900DCQ MOSFET datasheet

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