NDB410A Specs and Replacement
Type Designator: NDB410A
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 50 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Id| ⓘ - Maximum Drain Current: 9 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.25 Ohm
Package: TO263
NDB410A substitution
- MOSFET ⓘ Cross-Reference Search
NDB410A datasheet
ndb410ae ndb410b ndb410be ndp410ae ndp410b vndp410be.pdf
May 1994 NDP410A / NDP410AE / NDP410B / NDP410BE NDB410A / NDB410AE / NDB410B / NDB410BE N-Channel Enhancement Mode Field Effect Transistor General Description Features These N-channel enhancement mode power field 9 and 8A, 100V. RDS(ON) = 0.25 and 0.30 . effect transistors are produced using Fairchild's Critical DC electrical parameters specified at proprietary, high cell density... See More ⇒
Detailed specifications: MTP3N60, MTP3N60FI, MTP6N60, NDB4050, NDB4050L, NDB4060, NDB4060L, NDB408A, IRF1405, NDB5060, NDB5060L, NDB508A, NDB510A, NDB6020, NDB6020P, NDB6030, NDB6030L
Keywords - NDB410A MOSFET specs
NDB410A cross reference
NDB410A equivalent finder
NDB410A pdf lookup
NDB410A substitution
NDB410A replacement
Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs
🌐 : EN ES РУ
LIST
Last Update
MOSFET: AUB062N08BG | AUB060N08AG | AUB056N10 | AUB056N08BGL | AUB050N085 | AUB050N055 | AUB045N12 | AUB045N10BT | AUB039N10 | AUB034N10
Popular searches
2n3565 equivalent | 10n60 | 2sc1061 | a1023 | d313 transistor | 2sa1302 | 2sd315 | a1013