All MOSFET. NDB410A Datasheet

 

NDB410A Datasheet and Replacement


   Type Designator: NDB410A
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 50 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Id| ⓘ - Maximum Drain Current: 9 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.25 Ohm
   Package: TO263
 

 NDB410A substitution

   - MOSFET ⓘ Cross-Reference Search

 

NDB410A Datasheet (PDF)

 0.1. Size:57K  fairchild semi
 ndb410ae ndb410b ndb410be ndp410ae ndp410b vndp410be.pdf pdf_icon

NDB410A

May 1994 NDP410A / NDP410AE / NDP410B / NDP410BENDB410A / NDB410AE / NDB410B / NDB410BEN-Channel Enhancement Mode Field Effect Transistor General Description FeaturesThese N-channel enhancement mode power field9 and 8A, 100V. RDS(ON) = 0.25 and 0.30. effect transistors are produced using Fairchild'sCritical DC electrical parameters specified atproprietary, high cell density

Datasheet: MTP3N60 , MTP3N60FI , MTP6N60 , NDB4050 , NDB4050L , NDB4060 , NDB4060L , NDB408A , IRF9640 , NDB5060 , NDB5060L , NDB508A , NDB510A , NDB6020 , NDB6020P , NDB6030 , NDB6030L .

History: NDB4060L | SCH1334 | BLM2302 | EMB12P03V | LSD60R180HT | EMB17C03G | MEM614

Keywords - NDB410A MOSFET datasheet

 NDB410A cross reference
 NDB410A equivalent finder
 NDB410A lookup
 NDB410A substitution
 NDB410A replacement

 

 
Back to Top

 


 
.