All MOSFET. NDB410A Datasheet

 

NDB410A Datasheet and Replacement


   Type Designator: NDB410A
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 50 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Id| ⓘ - Maximum Drain Current: 9 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.25 Ohm
   Package: TO263
 

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NDB410A Datasheet (PDF)

 0.1. Size:57K  fairchild semi
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NDB410A

May 1994 NDP410A / NDP410AE / NDP410B / NDP410BENDB410A / NDB410AE / NDB410B / NDB410BEN-Channel Enhancement Mode Field Effect Transistor General Description FeaturesThese N-channel enhancement mode power field9 and 8A, 100V. RDS(ON) = 0.25 and 0.30. effect transistors are produced using Fairchild'sCritical DC electrical parameters specified atproprietary, high cell density

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRF530 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

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