All MOSFET. TSM85N10CZ Datasheet

 

TSM85N10CZ Datasheet and Replacement


   Type Designator: TSM85N10CZ
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 210 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
   |Id| ⓘ - Maximum Drain Current: 81 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 65 nS
   Cossⓘ - Output Capacitance: 300 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.01 Ohm
   Package: TO-220
 

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TSM85N10CZ Datasheet (PDF)

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TSM85N10CZ

TSM85N10 100V N-Channel Power MOSFET TO-220 PRODUCT SUMMARY Pin Definition: 1. Gate VDS (V) RDS(on)(m) ID (A) 2. Drain 3. Source 100 10 @ VGS =10V 81 Features Block Diagram Advanced Trench Technology Low RDS(ON) 10m (Max.) Low gate charge typical @ 154nC (Typ.) Low Crss typical @ 170pF (Typ.) Ordering Information Part No. Package Packing

Datasheet: TSM7N60CI , TSM7N60CZ , TSM7N65CI , TSM7N65CZ , TSM7N90CI , TSM7N90CZ , TSM802CQ , TSM80N08CZ , P55NF06 , TSM8N50CH , TSM8N50CP , TSM8N70CI , TSM8N80CI , TSM8N80CZ , TSM9409CS , TSM9426DCS , TSM9428CS .

History: IRFN054SMD | TSM7N90CI

Keywords - TSM85N10CZ MOSFET datasheet

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