All MOSFET. TSM85N10CZ Datasheet

 

TSM85N10CZ MOSFET. Datasheet pdf. Equivalent


   Type Designator: TSM85N10CZ
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 210 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
   |Id|ⓘ - Maximum Drain Current: 81 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 65 nS
   Cossⓘ - Output Capacitance: 300 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.01 Ohm
   Package: TO-220

 TSM85N10CZ Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

TSM85N10CZ Datasheet (PDF)

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 tsm85n10cz.pdf

TSM85N10CZ TSM85N10CZ

TSM85N10 100V N-Channel Power MOSFET TO-220 PRODUCT SUMMARY Pin Definition: 1. Gate VDS (V) RDS(on)(m) ID (A) 2. Drain 3. Source 100 10 @ VGS =10V 81 Features Block Diagram Advanced Trench Technology Low RDS(ON) 10m (Max.) Low gate charge typical @ 154nC (Typ.) Low Crss typical @ 170pF (Typ.) Ordering Information Part No. Package Packing

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