TSM85N10CZ Specs and Replacement
Type Designator: TSM85N10CZ
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 210 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
|Id| ⓘ - Maximum Drain Current: 81 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 65 nS
Cossⓘ - Output Capacitance: 300 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.01 Ohm
Package: TO-220
TSM85N10CZ substitution
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TSM85N10CZ datasheet
tsm85n10cz.pdf
TSM85N10 100V N-Channel Power MOSFET TO-220 PRODUCT SUMMARY Pin Definition 1. Gate VDS (V) RDS(on)(m ) ID (A) 2. Drain 3. Source 100 10 @ VGS =10V 81 Features Block Diagram Advanced Trench Technology Low RDS(ON) 10m (Max.) Low gate charge typical @ 154nC (Typ.) Low Crss typical @ 170pF (Typ.) Ordering Information Part No. Package Packing... See More ⇒
Detailed specifications: TSM7N60CI, TSM7N60CZ, TSM7N65CI, TSM7N65CZ, TSM7N90CI, TSM7N90CZ, TSM802CQ, TSM80N08CZ, IRF3710, TSM8N50CH, TSM8N50CP, TSM8N70CI, TSM8N80CI, TSM8N80CZ, TSM9409CS, TSM9426DCS, TSM9428CS
Keywords - TSM85N10CZ MOSFET specs
TSM85N10CZ cross reference
TSM85N10CZ equivalent finder
TSM85N10CZ pdf lookup
TSM85N10CZ substitution
TSM85N10CZ replacement
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History: SVSP14N60TD2 | AOI508 | KP731A | SVSP11N70MJD2
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