TT8J2 Datasheet and Replacement
Type Designator: TT8J2
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pdⓘ - Maximum Power Dissipation: 1.25 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id|ⓘ - Maximum Drain Current: 2.5 A
Tjⓘ - Maximum Junction Temperature: 150 °C
trⓘ - Rise Time: 20 nS
Cossⓘ - Output Capacitance: 65 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.084 Ohm
Package: TSST8
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TT8J2 Datasheet (PDF)
tt8j2.pdf

4V Drive Pch MOSFET TT8J2 Structure Dimensions (Unit : mm) Silicon P-channel MOSFET TSST8(8) (7) (6) (5) Features 1) Low On-resistance. 2) High Power Package. (1) (2) (3) (4)3) Low voltage drive. (4V) Abbreviated symbol : J02 Applications Each lead has same dimensionsSwitching Packaging specifications Inner circuit Package Taping(8) (7) (6) (5)Type Code T
tt8j21.pdf

TT8J21 Pch -20V -2.5A Power MOSFET DatasheetlOutline(8) VDSS-20V(7) TSST8(6) RDS(on) (Max.)68mW (5) (1) ID-2.5A(2) (3) PD1.25W(4) lFeatures lInner circuit1) Low on - resistance.(1) Tr1 Source (5) Tr2 Drain (2) Tr1 Gate (6) Tr2 Drain 2) -1.5V Drive.(3) Tr2 Source (7) Tr1 Drain (4) Tr2 Gate (8) Tr1 Drain 3) Built-in G-S Protection Diode.4) Sm
Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , CS150N03A8 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
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History: GSM3030 | IRF6612



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