All MOSFET. TT8J3 Datasheet

 

TT8J3 Datasheet and Replacement


   Type Designator: TT8J3
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 1.25 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 2.5 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 20 nS
   Cossⓘ - Output Capacitance: 65 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.084 Ohm
   Package: TSST8
 

 TT8J3 substitution

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TT8J3 Datasheet (PDF)

 ..1. Size:2753K  rohm
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TT8J3

TT8J3Datasheet-30V Pch+Pch Middle Power MOSFETlOutlinel TSST8VDSS-30VRDS(on)(Max.) 84m ID 2.5A PD1.25W lFeaturesllInner circuitl1) Low on - resistance.2) Small Surface Mount Package .3) Pb-free lead plating ; RoHS compliant.4) Halogen Free.lPack

Datasheet: TSM9N90CZ , TSM9NB50CI , TSM9NB50CZ , TSU45N60 , TT8J11 , TT8J13 , TT8J2 , TT8J21 , IRF4905 , TT8K1 , TT8K11 , TT8K2 , TT8M1 , TT8M2 , TT8M3 , TT8U1 , TT8U1TR .

History: MTP10N10ELG | BUK452-100B | 2N65L-TMA-T

Keywords - TT8J3 MOSFET datasheet

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