TT8J3 Datasheet and Replacement
Type Designator: TT8J3
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pd ⓘ - Maximum Power Dissipation: 1.25 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 2.5 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 20 nS
Cossⓘ - Output Capacitance: 65 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.084 Ohm
Package: TSST8
TT8J3 substitution
TT8J3 Datasheet (PDF)
tt8j3.pdf
TT8J3Datasheet-30V Pch+Pch Middle Power MOSFETlOutlinel TSST8VDSS-30VRDS(on)(Max.) 84m ID 2.5A PD1.25W lFeaturesllInner circuitl1) Low on - resistance.2) Small Surface Mount Package .3) Pb-free lead plating ; RoHS compliant.4) Halogen Free.lPack
Datasheet: TSM9N90CZ , TSM9NB50CI , TSM9NB50CZ , TSU45N60 , TT8J11 , TT8J13 , TT8J2 , TT8J21 , 5N65 , TT8K1 , TT8K11 , TT8K2 , TT8M1 , TT8M2 , TT8M3 , TT8U1 , TT8U1TR .
Keywords - TT8J3 MOSFET datasheet
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