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TT8J3 Specs and Replacement

Type Designator: TT8J3

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1.25 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 2.5 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 20 nS

Cossⓘ - Output Capacitance: 65 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.084 Ohm

Package: TSST8

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TT8J3 datasheet

 ..1. Size:2753K  rohm
 tt8j3.pdf pdf_icon

TT8J3

TT8J3 Datasheet -30V Pch+Pch Middle Power MOSFET lOutline l TSST8 VDSS -30V RDS(on)(Max.) 84m ID 2.5A PD 1.25W lFeatures l lInner circuit l 1) Low on - resistance. 2) Small Surface Mount Package . 3) Pb-free lead plating ; RoHS compliant. 4) Halogen Free. lPack... See More ⇒

Detailed specifications: TSM9N90CZ, TSM9NB50CI, TSM9NB50CZ, TSU45N60, TT8J11, TT8J13, TT8J2, TT8J21, 5N65, TT8K1, TT8K11, TT8K2, TT8M1, TT8M2, TT8M3, TT8U1, TT8U1TR

Keywords - TT8J3 MOSFET specs

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