All MOSFET. TT8K11 Datasheet

 

TT8K11 Datasheet and Replacement


   Type Designator: TT8K11
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 1.25 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 3 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 13 nS
   Cossⓘ - Output Capacitance: 55 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.071 Ohm
   Package: TSST8
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TT8K11 Datasheet (PDF)

 ..1. Size:509K  rohm
 tt8k11.pdf pdf_icon

TT8K11

Data Sheet4V Drive Nch + Nch MOSFET TT8K11 Structure Dimensions (Unit : mm)Silicon N-channel MOSFETTSST8Features(8) (7) (6) (5)1) Low on-resistance.2) Low voltage drive(4V drive).3) Small surface mount package(TSST8). (1) (2) (3) (4)Abbreviated symbol : K11 ApplicationSwitching Packaging specifications Inner circuit(8) (7) (6) (5)Package Tapin

 9.1. Size:183K  rohm
 tt8k1.pdf pdf_icon

TT8K11

1.V Drive Nch MOSFET TT8K1 Structure Dimensions (Unit : mm)Silicon N-channel MOSFETTSST8(8) (7) (6) (5)Features1) Low On-resistance.(1) (2) (3) (4)2) High power package.3) 1.5V drive.Abbreviated symbol : K01 ApplicationSwitching Packaging specifications Inner circuit(8) (7) (6) (5)Package TapingTypeCode TRBasic ordering unit (pieces)

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , CS150N03A8 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

History: SVS11N70SD2 | MMBF5457 | 2N3797 | BUK436W-800B | 2SK403 | AP97T07AGP | MP15N60EIF

Keywords - TT8K11 MOSFET datasheet

 TT8K11 cross reference
 TT8K11 equivalent finder
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 TT8K11 substitution
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