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TT8K11 Specs and Replacement

Type Designator: TT8K11

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1.25 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 3 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 13 nS

Cossⓘ - Output Capacitance: 55 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.071 Ohm

Package: TSST8

TT8K11 substitution

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TT8K11 datasheet

 ..1. Size:509K  rohm
 tt8k11.pdf pdf_icon

TT8K11

Data Sheet 4V Drive Nch + Nch MOSFET TT8K11 Structure Dimensions (Unit mm) Silicon N-channel MOSFET TSST8 Features (8) (7) (6) (5) 1) Low on-resistance. 2) Low voltage drive(4V drive). 3) Small surface mount package(TSST8). (1) (2) (3) (4) Abbreviated symbol K11 Application Switching Packaging specifications Inner circuit (8) (7) (6) (5) Package Tapin... See More ⇒

 9.1. Size:183K  rohm
 tt8k1.pdf pdf_icon

TT8K11

1. V Drive Nch MOSFET TT8K1 Structure Dimensions (Unit mm) Silicon N-channel MOSFET TSST8 (8) (7) (6) (5) Features 1) Low On-resistance. (1) (2) (3) (4) 2) High power package. 3) 1.5V drive. Abbreviated symbol K01 Application Switching Packaging specifications Inner circuit (8) (7) (6) (5) Package Taping Type Code TR Basic ordering unit (pieces) ... See More ⇒

Detailed specifications: TSM9NB50CZ, TSU45N60, TT8J11, TT8J13, TT8J2, TT8J21, TT8J3, TT8K1, IRFB3607, TT8K2, TT8M1, TT8M2, TT8M3, TT8U1, TT8U1TR, TT8U2, BUK104-50S

Keywords - TT8K11 MOSFET specs

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.

 

 

 

 

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