All MOSFET. TT8K11 Datasheet

 

TT8K11 Datasheet and Replacement


   Type Designator: TT8K11
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 1.25 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 3 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 13 nS
   Cossⓘ - Output Capacitance: 55 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.071 Ohm
   Package: TSST8
 

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TT8K11 Datasheet (PDF)

 ..1. Size:509K  rohm
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TT8K11

Data Sheet4V Drive Nch + Nch MOSFET TT8K11 Structure Dimensions (Unit : mm)Silicon N-channel MOSFETTSST8Features(8) (7) (6) (5)1) Low on-resistance.2) Low voltage drive(4V drive).3) Small surface mount package(TSST8). (1) (2) (3) (4)Abbreviated symbol : K11 ApplicationSwitching Packaging specifications Inner circuit(8) (7) (6) (5)Package Tapin

 9.1. Size:183K  rohm
 tt8k1.pdf pdf_icon

TT8K11

1.V Drive Nch MOSFET TT8K1 Structure Dimensions (Unit : mm)Silicon N-channel MOSFETTSST8(8) (7) (6) (5)Features1) Low On-resistance.(1) (2) (3) (4)2) High power package.3) 1.5V drive.Abbreviated symbol : K01 ApplicationSwitching Packaging specifications Inner circuit(8) (7) (6) (5)Package TapingTypeCode TRBasic ordering unit (pieces)

Datasheet: TSM9NB50CZ , TSU45N60 , TT8J11 , TT8J13 , TT8J2 , TT8J21 , TT8J3 , TT8K1 , AON7506 , TT8K2 , TT8M1 , TT8M2 , TT8M3 , TT8U1 , TT8U1TR , TT8U2 , BUK104-50S .

History: VS4N65CD | IXFT23N80Q | 14N50G-TF1-T | FKV550N | CEN2321A | 14N50L-TA3-T | BRCS120P012MC

Keywords - TT8K11 MOSFET datasheet

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