All MOSFET. TT8M1 Datasheet

 

TT8M1 MOSFET. Datasheet pdf. Equivalent


   Type Designator: TT8M1
   Marking Code: M01
   Type of Transistor: MOSFET
   Type of Control Channel: NP -Channel
   Pdⓘ - Maximum Power Dissipation: 1.25 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 10 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1 V
   |Id|ⓘ - Maximum Drain Current: 2.5 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 3.6 nC
   trⓘ - Rise Time: 17 nS
   Cossⓘ - Output Capacitance: 65 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.072 Ohm
   Package: TSST8

 TT8M1 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

TT8M1 Datasheet (PDF)

 ..1. Size:233K  rohm
 tt8m1.pdf

TT8M1 TT8M1

1.5V Drive Nch + Pch MOSFET TT8M1 Structure Dimensions (Unit : mm)Silicon N-channel MOSFET/ TSST8Silicon P-channel MOSFET(8) (7) (6) (5)Features1) Low on-resistance.(1) (2) (3) (4)2) High power package (TSST8).3) Low voltage drive (1.5V drive). Abbreviated symbol :M01 ApplicationSwitching Packaging specifications Inner circuitPackage TapingType

 0.1. Size:1303K  rohm
 tt8m11.pdf

TT8M1 TT8M1

Data Sheet4V Drive Nch + Pch MOSFET TT8M11 Structure Dimensions (Unit : mm)Silicon N-channel MOSFET/TSST8Silicon P-channel MOSFET(8) (7) (6) (5)Features1) Low on-resistance.(1) (2) (3) (4)2) Low voltage drive(4V drive).3) Small surface mount package(TSST8).Abbreviated symbol : M11 ApplicationSwitching Packaging specificationsInner circuit(8)

Datasheet: IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 20N50 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .

 

 
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