TT8M1 MOSFET Datasheet: NP-Ch, 20V, 2.5A. Full specification with pinout and replacement list

TT8M1 Specs and Replacement

Type Designator: TT8M1

Type of Transistor: MOSFET

Type of Control Channel: NP-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1.25 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 10 V

|Id| ⓘ - Maximum Drain Current: 2.5 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 17 nS

Cossⓘ - Output Capacitance: 65 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.072 Ohm

Package: TSST8

TT8M1 substitution

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TT8M1 datasheet

..1. Size:233K rohm
tt8m1.pdf pdf_icon

1.5V Drive Nch + Pch MOSFET TT8M1 Structure Dimensions (Unit mm) Silicon N-channel MOSFET/ TSST8 Silicon P-channel MOSFET (8) (7) (6) (5) Features 1) Low on-resistance. (1) (2) (3) (4) 2) High power package (TSST8). 3) Low voltage drive (1.5V drive). Abbreviated symbol M01 Application Switching Packaging specifications Inner circuit Package Taping Type ... See More ⇒

0.1. Size:1303K rohm
tt8m11.pdf pdf_icon

Data Sheet 4V Drive Nch + Pch MOSFET TT8M11 Structure Dimensions (Unit mm) Silicon N-channel MOSFET/ TSST8 Silicon P-channel MOSFET (8) (7) (6) (5) Features 1) Low on-resistance. (1) (2) (3) (4) 2) Low voltage drive(4V drive). 3) Small surface mount package(TSST8). Abbreviated symbol M11 Application Switching Packaging specifications Inner circuit (8)... See More ⇒

Detailed specifications: TT8J11, TT8J13, TT8J2, TT8J21, TT8J3, TT8K1, TT8K11, TT8K2, IRF530, TT8M2, TT8M3, TT8U1, TT8U1TR, TT8U2, BUK104-50S, BUK114-50L-S, BUK127-50DL