All MOSFET. TT8M2 Datasheet

 

TT8M2 Datasheet and Replacement


   Type Designator: TT8M2
   Type of Transistor: MOSFET
   Type of Control Channel: NP -Channel
   Pd ⓘ - Maximum Power Dissipation: 1.25 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 10 V
   |Id| ⓘ - Maximum Drain Current: 2.5 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 30 nS
   Cossⓘ - Output Capacitance: 60 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.09 Ohm
   Package: TSST8
 

 TT8M2 substitution

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TT8M2 Datasheet (PDF)

 ..1. Size:194K  rohm
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TT8M2

2.5V Drive Nch MOSFET 1.5V Drive Pch MOSFET TT8M2 Structure Dimensions (Unit : mm) Silicon N-channel MOSFET/ TSST8Silicon P-channel MOSFET (8) (7) (6) (5) Features 1) Low on-state resistance. (1) (2) (3) (4)2) Low voltage drive. 3) High power package. Abbreviated symbol : M02Each lead has same dimensions Application Inner circuit Switching (8) (7) (6) (5)

Datasheet: TT8J13 , TT8J2 , TT8J21 , TT8J3 , TT8K1 , TT8K11 , TT8K2 , TT8M1 , IRLB4132 , TT8M3 , TT8U1 , TT8U1TR , TT8U2 , BUK104-50S , BUK114-50L-S , BUK127-50DL , BUK127-50GT .

History: AM4934N | DMN4036LK3

Keywords - TT8M2 MOSFET datasheet

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