TT8M2 PDF and Equivalents Search

 

TT8M2 Specs and Replacement

Type Designator: TT8M2

Type of Transistor: MOSFET

Type of Control Channel: NP-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1.25 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 10 V

|Id| ⓘ - Maximum Drain Current: 2.5 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 30 nS

Cossⓘ - Output Capacitance: 60 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.09 Ohm

Package: TSST8

TT8M2 substitution

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TT8M2 datasheet

 ..1. Size:194K  rohm
 tt8m2.pdf pdf_icon

TT8M2

2.5V Drive Nch MOSFET 1.5V Drive Pch MOSFET TT8M2 Structure Dimensions (Unit mm) Silicon N-channel MOSFET/ TSST8 Silicon P-channel MOSFET (8) (7) (6) (5) Features 1) Low on-state resistance. (1) (2) (3) (4) 2) Low voltage drive. 3) High power package. Abbreviated symbol M02 Each lead has same dimensions Application Inner circuit Switching (8) (7) (6) (5) ... See More ⇒

Detailed specifications: TT8J13, TT8J2, TT8J21, TT8J3, TT8K1, TT8K11, TT8K2, TT8M1, CS150N03A8, TT8M3, TT8U1, TT8U1TR, TT8U2, BUK104-50S, BUK114-50L-S, BUK127-50DL, BUK127-50GT

Keywords - TT8M2 MOSFET specs

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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.

 

 

 

 

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