All MOSFET. TT8M3 Datasheet

 

TT8M3 Datasheet and Replacement


   Type Designator: TT8M3
   Type of Transistor: MOSFET
   Type of Control Channel: NP -Channel
   Pd ⓘ - Maximum Power Dissipation: 1.25 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 10 V
   |Id| ⓘ - Maximum Drain Current: 2.5 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 17 nS
   Cossⓘ - Output Capacitance: 65 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.072 Ohm
   Package: TSST8
 

 TT8M3 substitution

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TT8M3 Datasheet (PDF)

 ..1. Size:229K  rohm
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TT8M3

1.5V Drive Nch + Pch MOSFET TT8M3StructureSilicon N-channel MOSFET/ Dimensions (Unit : mm)TSST8Silicon P-channel MOSFET(8) (7) (6) (5)Features1) Low On-state resistance.2) Low voltage drive(1.5V). (1) (2) (3) (4)3) High power package.Abbreviated symbol :M03ApplicationSwitchingPackaging specifications Inner circuitPackage Taping(8) (7) (6) (5)T

Datasheet: TT8J2 , TT8J21 , TT8J3 , TT8K1 , TT8K11 , TT8K2 , TT8M1 , TT8M2 , IRFP450 , TT8U1 , TT8U1TR , TT8U2 , BUK104-50S , BUK114-50L-S , BUK127-50DL , BUK127-50GT , BUK128-50DL .

History: 10N65KL-TF1-T | IXFT23N80Q | 14N50G-TF1-T | 12N65TF | CEN2321A | 14N50L-TA3-T | BRCS120P012MC

Keywords - TT8M3 MOSFET datasheet

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