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TT8M3 Specs and Replacement

Type Designator: TT8M3

Type of Transistor: MOSFET

Type of Control Channel: NP-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1.25 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 10 V

|Id| ⓘ - Maximum Drain Current: 2.5 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 17 nS

Cossⓘ - Output Capacitance: 65 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.072 Ohm

Package: TSST8

TT8M3 substitution

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TT8M3 datasheet

 ..1. Size:229K  rohm
 tt8m3.pdf pdf_icon

TT8M3

1.5V Drive Nch + Pch MOSFET TT8M3 Structure Silicon N-channel MOSFET/ Dimensions (Unit mm) TSST8 Silicon P-channel MOSFET (8) (7) (6) (5) Features 1) Low On-state resistance. 2) Low voltage drive(1.5V). (1) (2) (3) (4) 3) High power package. Abbreviated symbol M03 Application Switching Packaging specifications Inner circuit Package Taping (8) (7) (6) (5) T... See More ⇒

Detailed specifications: TT8J2, TT8J21, TT8J3, TT8K1, TT8K11, TT8K2, TT8M1, TT8M2, NCEP15T14, TT8U1, TT8U1TR, TT8U2, BUK104-50S, BUK114-50L-S, BUK127-50DL, BUK127-50GT, BUK128-50DL

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.

 

 

 

 

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