TT8U1TR MOSFET. Datasheet pdf. Equivalent
Type Designator: TT8U1TR
Marking Code: U01
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pdⓘ - Maximum Power Dissipation: 1.25 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 10 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1 V
|Id|ⓘ - Maximum Drain Current: 2.4 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 6.7 nC
trⓘ - Rise Time: 25 nS
Cossⓘ - Output Capacitance: 60 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.105 Ohm
Package: TSST8
TT8U1TR Transistor Equivalent Substitute - MOSFET Cross-Reference Search
TT8U1TR Datasheet (PDF)
tt8u1tr.pdf
1.5V Drive Pch +SBD MOSFET TT8U1 Structure Dimensions (Unit : mm) Silicon P-channel MOSFET / schottky barrier diode TSST8(8) (7) (6) (5) Features 1) Low On-resistance. 2) High Power Package. (1) (2) (3) (4)3) Low voltage drive. (1.5V) Abbreviated symbol : U01Each lead has same dimensions Applications Switching Inner circuit Packaging specifications (8) (7
tt8u1.pdf
1.5V Drive Pch +SBD MOSFET TT8U1 Structure Dimensions (Unit : mm) Silicon P-channel MOSFET / schottky barrier diode TSST8(8) (7) (6) (5) Features 1) Low On-resistance. 2) High Power Package. (1) (2) (3) (4)3) Low voltage drive. (1.5V) Abbreviated symbol : U01Each lead has same dimensions Applications Switching Inner circuit Packaging specifications (8) (7
Datasheet: FMM50-025TF , FMM60-02TF , FMM75-01F , FMP26-02P , FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , 5N60 , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , GMM3x180-004X2-SMD , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL .
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