All MOSFET. TT8U1TR Datasheet

 

TT8U1TR Datasheet and Replacement


   Type Designator: TT8U1TR
   Marking Code: U01
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pdⓘ - Maximum Power Dissipation: 1.25 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 10 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1 V
   |Id|ⓘ - Maximum Drain Current: 2.4 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 6.7 nC
   trⓘ - Rise Time: 25 nS
   Cossⓘ - Output Capacitance: 60 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.105 Ohm
   Package: TSST8
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TT8U1TR Datasheet (PDF)

 ..1. Size:229K  rohm
 tt8u1tr.pdf pdf_icon

TT8U1TR

1.5V Drive Pch +SBD MOSFET TT8U1 Structure Dimensions (Unit : mm) Silicon P-channel MOSFET / schottky barrier diode TSST8(8) (7) (6) (5) Features 1) Low On-resistance. 2) High Power Package. (1) (2) (3) (4)3) Low voltage drive. (1.5V) Abbreviated symbol : U01Each lead has same dimensions Applications Switching Inner circuit Packaging specifications (8) (7

 9.1. Size:166K  rohm
 tt8u1.pdf pdf_icon

TT8U1TR

1.5V Drive Pch +SBD MOSFET TT8U1 Structure Dimensions (Unit : mm) Silicon P-channel MOSFET / schottky barrier diode TSST8(8) (7) (6) (5) Features 1) Low On-resistance. 2) High Power Package. (1) (2) (3) (4)3) Low voltage drive. (1.5V) Abbreviated symbol : U01Each lead has same dimensions Applications Switching Inner circuit Packaging specifications (8) (7

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , CS150N03A8 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

History: IXFK44N50Q | SL2343 | 2P829V

Keywords - TT8U1TR MOSFET datasheet

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 TT8U1TR equivalent finder
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