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TT8U2 Specs and Replacement

Type Designator: TT8U2

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1.25 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 10 V

|Id| ⓘ - Maximum Drain Current: 2.4 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 25 nS

Cossⓘ - Output Capacitance: 60 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.105 Ohm

Package: TSST8

TT8U2 substitution

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TT8U2 datasheet

 ..1. Size:316K  rohm
 tt8u2.pdf pdf_icon

TT8U2

1.5V Drive Pch +SBD MOSFET TT8U2 Structure Dimensions (Unit mm) Silicon P-channel MOSFET / schottky barrier diode TSST8 Features (8) (7) (6) (5) 1) Pch MOSFET and shottky barrier diode are put in TSST8 package. 2) High-speed switching and Low on-resistance. 3) Low voltage drive(1.5V). (1) (2) (3) (4) 4) Built in Low IR shottky barierr daiode. Abbreviated symbol U02 ... See More ⇒

Detailed specifications: TT8K1, TT8K11, TT8K2, TT8M1, TT8M2, TT8M3, TT8U1, TT8U1TR, IRFP450, BUK104-50S, BUK114-50L-S, BUK127-50DL, BUK127-50GT, BUK128-50DL, BUK129-50DL, BUK138-50DL, BUK139-50DL

Keywords - TT8U2 MOSFET specs

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