BUK1M200-50SGTD Datasheet and Replacement
Type Designator: BUK1M200-50SGTD
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 9.4 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 50 V
|Id| ⓘ - Maximum Drain Current: 2.7 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.2 Ohm
Package: SOT-163-1
BUK1M200-50SGTD substitution
BUK1M200-50SGTD Datasheet (PDF)
buk1m200-50sgtd.pdf

BUK1M200-50SGTDQuad channel logic level TOPFETRev. 01 31 March 2003 Product data1. Product profile1.1 DescriptionQuad temperature and overload protected power switch based on TOPFET Trenchtechnology in a 20-pin surface mount plastic package.Product availability:BUK1M200-50SGTD in SOT163-1 (SO20).1.2 Features Power TrenchMOS 5V logic compatible Overtemperature pro
buk1m200 50sdld.pdf

BUK1M200-50SDLDQuad channel TOPFETRev. 01 02 April 2003 Product data1. Product profile1.1 DescriptionQuad temperature and overload protected logic level power MOSFET in TOPFETtechnology in a 20-pin surface mount plastic package.Product availability:BUK1M200-50SDLD in SOT163-1 (SO20).1.2 Features Power TrenchMOS 5 V logic compatible input level Overtemperature
Datasheet: BUK104-50S , BUK114-50L-S , BUK127-50DL , BUK127-50GT , BUK128-50DL , BUK129-50DL , BUK138-50DL , BUK139-50DL , 13N50 , BUK452-100B , BUK455-100B , BUK455-200B , BUK456-100B , BUK472-100A , BUK472-100B , BUK543-100B , BUK553-100B .
Keywords - BUK1M200-50SGTD MOSFET datasheet
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BUK1M200-50SGTD replacement



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