BUK1M200-50SGTD
MOSFET. Datasheet pdf. Equivalent
Type Designator: BUK1M200-50SGTD
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 9.4
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 50
V
|Id|ⓘ - Maximum Drain Current: 2.7
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.2
Ohm
Package: SOT-163-1
BUK1M200-50SGTD
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
BUK1M200-50SGTD
Datasheet (PDF)
0.1. Size:295K philips
buk1m200-50sgtd.pdf
BUK1M200-50SGTDQuad channel logic level TOPFETRev. 01 31 March 2003 Product data1. Product profile1.1 DescriptionQuad temperature and overload protected power switch based on TOPFET Trenchtechnology in a 20-pin surface mount plastic package.Product availability:BUK1M200-50SGTD in SOT163-1 (SO20).1.2 Features Power TrenchMOS 5V logic compatible Overtemperature pro
6.1. Size:302K philips
buk1m200 50sdld.pdf
BUK1M200-50SDLDQuad channel TOPFETRev. 01 02 April 2003 Product data1. Product profile1.1 DescriptionQuad temperature and overload protected logic level power MOSFET in TOPFETtechnology in a 20-pin surface mount plastic package.Product availability:BUK1M200-50SDLD in SOT163-1 (SO20).1.2 Features Power TrenchMOS 5 V logic compatible input level Overtemperature
Datasheet: WPB4002
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