All MOSFET. BUK6C2R1-55C Datasheet

 

BUK6C2R1-55C Datasheet and Replacement


   Type Designator: BUK6C2R1-55C
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 300 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 55 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 16 V
   |Id| ⓘ - Maximum Drain Current: 228 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 206 nS
   Cossⓘ - Output Capacitance: 1075 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.023 Ohm
   Package: D2PAK
 

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BUK6C2R1-55C Datasheet (PDF)

 ..1. Size:185K  nxp
 buk6c2r1-55c.pdf pdf_icon

BUK6C2R1-55C

BUK6C2R1-55CN-channel TrenchMOS intermediate level FETRev. 3 18 January 2012 Product data sheet1. Product profile1.1 General descriptionIntermediate level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in high-performance au

 9.1. Size:188K  nxp
 buk6c3r3-75c.pdf pdf_icon

BUK6C2R1-55C

BUK6C3R3-75CN-channel TrenchMOS intermediate level FETRev. 3 18 January 2012 Product data sheet1. Product profile1.1 General descriptionIntermediate level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in high-performance au

Datasheet: BUK553-100B , BUK553-60A , BUK553-60B , BUK555-200B , BUK6207-30C , BUK6208-40C , BUK6240-75C , BUK652R7-30C , IRFZ48N , BUK6C3R3-75C , BUK7213-40A , BUK7505-30A , BUK7514-60E , BUK751R6-30E , BUK751R8-40E , BUK7524-55A , BUK752R3-40E .

Keywords - BUK6C2R1-55C MOSFET datasheet

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