BUK6C2R1-55C Datasheet and Replacement
Type Designator: BUK6C2R1-55C
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 300 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 55 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 16 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.8 V
|Id| ⓘ - Maximum Drain Current: 228 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Qg ⓘ - Total Gate Charge: 253 nC
tr ⓘ - Rise Time: 206 nS
Cossⓘ - Output Capacitance: 1075 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.023 Ohm
Package: D2PAK
BUK6C2R1-55C substitution
BUK6C2R1-55C Datasheet (PDF)
buk6c2r1-55c.pdf

BUK6C2R1-55CN-channel TrenchMOS intermediate level FETRev. 3 18 January 2012 Product data sheet1. Product profile1.1 General descriptionIntermediate level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in high-performance au
buk6c3r3-75c.pdf

BUK6C3R3-75CN-channel TrenchMOS intermediate level FETRev. 3 18 January 2012 Product data sheet1. Product profile1.1 General descriptionIntermediate level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in high-performance au
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