BUK6C2R1-55C Specs and Replacement
Type Designator: BUK6C2R1-55C
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 300 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 55 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 16 V
|Id| ⓘ - Maximum Drain Current: 228 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Electrical Characteristics
tr ⓘ - Rise Time: 206 nS
Cossⓘ - Output Capacitance: 1075 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.023 Ohm
Package: D2PAK
BUK6C2R1-55C substitution
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BUK6C2R1-55C datasheet
buk6c2r1-55c.pdf
BUK6C2R1-55C N-channel TrenchMOS intermediate level FET Rev. 3 18 January 2012 Product data sheet 1. Product profile 1.1 General description Intermediate level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in high-performance au... See More ⇒
buk6c3r3-75c.pdf
BUK6C3R3-75C N-channel TrenchMOS intermediate level FET Rev. 3 18 January 2012 Product data sheet 1. Product profile 1.1 General description Intermediate level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in high-performance au... See More ⇒
Detailed specifications: BUK553-100B, BUK553-60A, BUK553-60B, BUK555-200B, BUK6207-30C, BUK6208-40C, BUK6240-75C, BUK652R7-30C, STP65NF06, BUK6C3R3-75C, BUK7213-40A, BUK7505-30A, BUK7514-60E, BUK751R6-30E, BUK751R8-40E, BUK7524-55A, BUK752R3-40E
Keywords - BUK6C2R1-55C MOSFET specs
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BUK6C2R1-55C substitution
BUK6C2R1-55C replacement
Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.
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