All MOSFET. NDB610A Datasheet

 

NDB610A Datasheet and Replacement


   Type Designator: NDB610A
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 100 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Id| ⓘ - Maximum Drain Current: 26 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.065 Ohm
   Package: TO263
 

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NDB610A Datasheet (PDF)

 0.1. Size:63K  fairchild semi
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NDB610A

May 1994 NDP610A / NDP610AE / NDP610B / NDP610BENDB610A / NDB610AE / NDB610B / NDB610BEN-Channel Enhancement Mode Field Effect Transistor General Description FeaturesThese N-channel enhancement mode power field26 and 24A, 100V. RDS(ON) = 0.065 and 0.080. effect transistors are produced using Fairchild'sCritical DC electrical parameters specified atproprietary, high cell den

Datasheet: NDB603AL , NDB6050 , NDB6050L , NDB6051 , NDB6051L , NDB6060 , NDB6060L , NDB608A , BS170 , NDB7050 , NDB7050L , NDB7051 , NDB7051L , NDB7052 , NDB7052L , NDB7060 , NDB7060L .

History: SWJ7N70D | 4N70K | SPB100N06S2-05 | SFG100N10DF | NCE60R360 | SSM5H06FE | IRFH5215PBF

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