NDB610A Datasheet. Specs and Replacement

Type Designator: NDB610A  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 100 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Id| ⓘ - Maximum Drain Current: 26 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.065 Ohm

Package: TO263

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NDB610A datasheet

 0.1. Size:63K  fairchild semi
 ndb610ae ndb610b ndb610be ndp610ae ndp610b ndp610be.pdf pdf_icon

NDB610A

May 1994 NDP610A / NDP610AE / NDP610B / NDP610BE NDB610A / NDB610AE / NDB610B / NDB610BE N-Channel Enhancement Mode Field Effect Transistor General Description Features These N-channel enhancement mode power field 26 and 24A, 100V. RDS(ON) = 0.065 and 0.080 . effect transistors are produced using Fairchild's Critical DC electrical parameters specified at proprietary, high cell den... See More ⇒

Detailed specifications: NDB603AL, NDB6050, NDB6050L, NDB6051, NDB6051L, NDB6060, NDB6060L, NDB608A, AOD4184A, NDB7050, NDB7050L, NDB7051, NDB7051L, NDB7052, NDB7052L, NDB7060, NDB7060L

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