BUK9615-100E Datasheet. Specs and Replacement

Type Designator: BUK9615-100E  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 182 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 10 V

|Id| ⓘ - Maximum Drain Current: 66 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 62.2 nS

Cossⓘ - Output Capacitance: 307 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.014 Ohm

Package: D2PAK

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BUK9615-100E datasheet

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BUK9615-100E

BUK9615-100E N-channel TrenchMOS logic level FET 13 February 2014 Product data sheet 1. General description Logic level N-channel MOSFET in a SOT404 package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications. 2. Features and benefits AEC Q101 compliant Repetitive avalanche rated ... See More ⇒

 3.1. Size:70K  philips
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BUK9615-100E

Philips Semiconductors Product specification TrenchMOS transistor BUK9515-100A Logic level FET BUK9615-100A GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode logic SYMBOL PARAMETER MAX. UNIT level field-effect power transistor in a plastic envelope available in VDS Drain-source voltage 100 V TO220AB and SOT404 . Using ID Drain current (DC) 75 A trench techno... See More ⇒

 3.2. Size:719K  nxp
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BUK9615-100E

BUK9615-100A N-channel TrenchMOS logic level FET Rev. 3 19 April 2011 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. 1.2 Feature... See More ⇒

 7.1. Size:71K  philips
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BUK9615-100E

Philips Semiconductors Product specification TrenchMOS transistor BUK95150-55A Logic level FET BUK96150-55A GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode logic SYMBOL PARAMETER MAX. UNIT level field-effect power transistor in a plastic envelope available in VDS Drain-source voltage 55 V TO220AB and SOT404 . Using ID Drain current (DC) 13 A trench techno... See More ⇒

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Detailed specifications: BUK9540-100A, BUK954R4-80E, BUK954R8-60E, BUK956R1-100E, BUK958R5-40E, BUK9611-80E, BUK9614-60E, BUK96150-55A, AOD4184A, BUK961R4-30E, BUK961R5-30E, BUK961R6-40E, BUK961R7-40E, BUK9620-100A, BUK962R1-40E, BUK962R5-60E, BUK962R6-40E

Keywords - BUK9615-100E MOSFET specs

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