BUZ11AL PDF and Equivalents Search

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BUZ11A N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS TYPE V R I DSS DS(on) D BUZ11A 50 V ... See More ⇒

isc N-Channel Mosfet Transistor BUZ11A FEATURES Static Drain-Source On-Resistance R = 0.055 (Max) DS(on) Avalanche rugged technology High current capability 175 Operating Temperature High speed switching Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION High current,high speed switching Solenoid and relay drivers... See More ⇒

BUZ11 BUZ11FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS TYPE V R I DSS DS(on) D BUZ11 50 V ... See More ⇒

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BUZ11 Data Sheet June 1999 File Number 2253.2 30A, 50V, 0.040 Ohm, N-Channel Power Features MOSFET 30A, 50V [ /Title This is an N-Channel enhancement mode silicon gate power rDS(ON) = 0.040 (BUZ1 field effect transistor designed for applications such as SOA is Power Dissipation Limited 1) switching regulators, switching converters, motor drivers, Nanosecond Sw... See More ⇒

BUZ 110 S SPP80N05 SIPMOS Power Transistor N channel Enhancement mode Avalanche-rated dv/dt rated 175 C operating temperature also in SMD available Pin 1 Pin 2 Pin 3 G D S Type VDS ID RDS(on) Package Ordering Code BUZ 110 S 55 V 80 A 0.012 TO-220 AB Q67040-S4005-A2 Maximum Ratings Parameter Symbol Values Unit Continuous drain current ID A TC = 25 ... See More ⇒

BUZ111SL SPP80N05L SIPMOS Power Transistor N channel Enhancement mode Logic Level Avalanche-rated dv/dt rated 175 C operating temperature also in SMD available Pin 1 Pin 2 Pin 3 G D S Type VDS ID RDS(on) Package Ordering Code BUZ111SL 55 V 80 A 0.01 TO-220 AB Q67040-S4003-A2 Maximum Ratings Parameter Symbol Values Unit Continuous drain current... See More ⇒

BUZ 110S SIPMOS Power Transistor Product Summary Features Drain source voltage 55 V VDS N channel Drain-Source on-state resistance 0.01 RDS(on) Enhancement mode Continuous drain current 80 A ID Avalanche rated dv/dt rated 175 C operating temperature Pin 1 Pin 2 Pin 3 Type Package Ordering Code Packaging G D S BUZ110S P-TO220-3-1 Q67040-S4005-A2 Tub... See More ⇒

BUZ 111S SIPMOS Power Transistor Product Summary Features Drain source voltage 55 V VDS N channel Drain-Source on-state resistance 0.008 RDS(on) Enhancement mode Continuous drain current 80 A ID Avalanche rated dv/dt rated 175 C operating temperature Pin 1 Pin 2 Pin 3 Type Package Ordering Code Packaging G D S BUZ111S P-TO220-3-1 Q67040-S4003-A2 Tub... See More ⇒

BUZ 110SL SIPMOS Power Transistor Product Summary Features Drain source voltage 55 V VDS N channel Drain-Source on-state resistance 0.01 RDS(on) Enhancement mode Continuous drain current 80 A ID Avalanche rated Logic Level dv/dt rated 175 C operating temperature Pin 1 Pin 2 Pin 3 Type Package Ordering Code Packaging G D S BUZ110SL P-TO220-3-1 Q... See More ⇒

BUZ 111SL SIPMOS Power Transistor Product Summary Features Drain source voltage 55 V VDS N channel Drain-Source on-state resistance 0.007 RDS(on) Enhancement mode Continuous drain current 80 A ID Avalanche rated Logic Level dv/dt rated 175 C operating temperature Pin 1 Pin 2 Pin 3 Type Package Ordering Code Packaging G D S BUZ111SL P-TO220-3-1 ... See More ⇒

BUZ11 Data Sheet September 2013 File Number 2253.2 Features N-Channel Power MOSFET 50V, 30A, 40 m 30A, 50V This is an N-Channel enhancement mode silicon gate power rDS(ON) = 0.040 field effect transistor designed for applications such as SOA is Power Dissipation Limited switching regulators, switching converters, motor drivers, Nanosecond Switching Speeds re... See More ⇒

isc N-Channel Mosfet Transistor BUZ11 FEATURES Static Drain-Source On-Resistance R = 0.04 (Max) DS(on) SOA is Power Dissipation Limited High input impedance High speed switching Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Designed for applications such as switching regulators, switching converters, motor drivers,rela... See More ⇒

isc N-Channel Mosfet Transistor BUZ11S2 FEATURES Static Drain-Source On-Resistance R = 0.04 (Max) DS(on) SOA is Power Dissipation Limited High input impedance High speed switching Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Designed for applications such as switching regulators, switching converters, motor drivers,re... See More ⇒