All MOSFET. BUZ201 Datasheet

 

BUZ201 MOSFET. Datasheet pdf. Equivalent


   Type Designator: BUZ201
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 125 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 400 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 12.5 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 80 nS
   Cossⓘ - Output Capacitance: 300 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.4 Ohm
   Package: TO-204AA

 BUZ201 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

BUZ201 Datasheet (PDF)

 ..1. Size:181K  siemens
buz201.pdf

BUZ201
BUZ201

 ..2. Size:223K  inchange semiconductor
buz201.pdf

BUZ201
BUZ201

isc N-Channel Mosfet Transistor BUZ201FEATURESStatic Drain-Source On-Resistance: R = 0.4(Max)DS(on)SOA is Power Dissipation LimitedHigh input impedanceHigh speed switchingMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONDesigned for applications such as switching regulators,switching converters, motor drivers,rela

 9.1. Size:273K  st
buz20.pdf

BUZ201
BUZ201

 9.2. Size:186K  siemens
buz202.pdf

BUZ201
BUZ201

 9.3. Size:176K  siemens
buz206.pdf

BUZ201
BUZ201

 9.4. Size:336K  siemens
buz205.pdf

BUZ201
BUZ201

SIPMOS Power Transistor BUZ 205 N channel Enhancement mode FREDFETType VDS ID RDS (on) Package 1) Ordering CodeBUZ 205 400 V 6.0 A 1.0 TO-220 AB C67078-A1401-A2Maximum RatingsParameter Symbol Values UnitContinuous drain current, TC = 35 C ID 6.0 APulsed drain current, TC = 25 C ID puls 24Drain-source voltage VDS 400 VDrain-gate voltage, RGS = 20 k VDGR 400Ga

 9.5. Size:90K  infineon
buz20.pdf

BUZ201
BUZ201

BUZ 20SIPMOS Power Transistor N channel Enhancement mode Avalanche-rated Pin 1 Pin 2 Pin 3G D SType VDS ID RDS(on) Package Ordering CodeBUZ 20 100 V 13.5 A 0.2 TO-220 AB C67078-S1302-A2Maximum RatingsParameter Symbol Values UnitContinuous drain current ID ATC = 28 C 13.5Pulsed drain current IDpulsTC = 25 C 54Avalanche current,limited by Tjmax IA

 9.6. Size:223K  inchange semiconductor
buz202.pdf

BUZ201
BUZ201

isc N-Channel Mosfet Transistor BUZ202FEATURESStatic Drain-Source On-Resistance: R = 0.5(Max)DS(on)SOA is Power Dissipation LimitedHigh input impedanceHigh speed switchingMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONDesigned for applications such as switching regulators,switching converters, motor drivers,rela

 9.7. Size:228K  inchange semiconductor
buz206.pdf

BUZ201
BUZ201

isc N-Channel Mosfet Transistor BUZ206FEATURESHigh speed switchingLow RDS(ON)Easy driver for cost effective applicationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONAutomotive power actuator driversMotor controlsDC-DC converters r .ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL ARAMETER VALUE UNITV Drain-S

 9.8. Size:229K  inchange semiconductor
buz20.pdf

BUZ201
BUZ201

isc N-Channel Mosfet Transistor BUZ20FEATURESStatic Drain-Source On-Resistance: R = 0.2(Max)DS(on)SOA is Power Dissipation LimitedHigh input impedanceHigh speed switchingMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONDesigned for applications such as switching regulators, switchingconverters, motor drivers,relay

 9.9. Size:228K  inchange semiconductor
buz205.pdf

BUZ201
BUZ201

isc N-Channel Mosfet Transistor BUZ205FEATURESHigh speed switchingLow RDS(ON)Easy driver for cost effective applicationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONAutomotive power actuator driversMotor controlsDC-DC converters r .ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL ARAMETER VALUE UNITV Drain-S

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History: R9522 | STP20N65M5 | IRF260B

 

 
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