BUZ201 - описание и поиск аналогов

 ..1. Size:181K  siemens
 buz201.pdf 

 ..2. Size:223K  inchange semiconductor
 buz201.pdf 

isc N-Channel Mosfet Transistor BUZ201 FEATURES Static Drain-Source On-Resistance R = 0.4 (Max) DS(on) SOA is Power Dissipation Limited High input impedance High speed switching Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Designed for applications such as switching regulators, switching converters, motor drivers,rela

 9.1. Size:273K  st
 buz20.pdf 

 9.2. Size:186K  siemens
 buz202.pdf 

 9.3. Size:176K  siemens
 buz206.pdf 

 9.4. Size:336K  siemens
 buz205.pdf 

SIPMOS Power Transistor BUZ 205 N channel Enhancement mode FREDFET Type VDS ID RDS (on) Package 1) Ordering Code BUZ 205 400 V 6.0 A 1.0 TO-220 AB C67078-A1401-A2 Maximum Ratings Parameter Symbol Values Unit Continuous drain current, TC = 35 C ID 6.0 A Pulsed drain current, TC = 25 C ID puls 24 Drain-source voltage VDS 400 V Drain-gate voltage, RGS = 20 k VDGR 400 Ga

 9.5. Size:90K  infineon
 buz20.pdf 

BUZ 20 SIPMOS Power Transistor N channel Enhancement mode Avalanche-rated Pin 1 Pin 2 Pin 3 G D S Type VDS ID RDS(on) Package Ordering Code BUZ 20 100 V 13.5 A 0.2 TO-220 AB C67078-S1302-A2 Maximum Ratings Parameter Symbol Values Unit Continuous drain current ID A TC = 28 C 13.5 Pulsed drain current IDpuls TC = 25 C 54 Avalanche current,limited by Tjmax IA

 9.6. Size:223K  inchange semiconductor
 buz202.pdf 

isc N-Channel Mosfet Transistor BUZ202 FEATURES Static Drain-Source On-Resistance R = 0.5 (Max) DS(on) SOA is Power Dissipation Limited High input impedance High speed switching Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Designed for applications such as switching regulators, switching converters, motor drivers,rela

 9.7. Size:228K  inchange semiconductor
 buz206.pdf 

isc N-Channel Mosfet Transistor BUZ206 FEATURES High speed switching Low R DS(ON) Easy driver for cost effective application Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Automotive power actuator drivers Motor controls DC-DC converters r . ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL ARAMETER VALUE UNIT V Drain-S

 9.8. Size:229K  inchange semiconductor
 buz20.pdf 

isc N-Channel Mosfet Transistor BUZ20 FEATURES Static Drain-Source On-Resistance R = 0.2 (Max) DS(on) SOA is Power Dissipation Limited High input impedance High speed switching Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Designed for applications such as switching regulators, switching converters, motor drivers,relay

 9.9. Size:228K  inchange semiconductor
 buz205.pdf 

isc N-Channel Mosfet Transistor BUZ205 FEATURES High speed switching Low R DS(ON) Easy driver for cost effective application Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Automotive power actuator drivers Motor controls DC-DC converters r . ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL ARAMETER VALUE UNIT V Drain-S