BUZ22 Specs and Replacement

Type Designator: BUZ22

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 125 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 34 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 80 nS

Cossⓘ - Output Capacitance: 450 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.055 Ohm

Package: TO-220AB

BUZ22 substitution

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BUZ22 datasheet

 ..1. Size:85K  infineon
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BUZ22

BUZ 22 SIPMOS Power Transistor N channel Enhancement mode Avalanche-rated Pin 1 Pin 2 Pin 3 G D S Type VDS ID RDS(on) Package Ordering Code BUZ 22 100 V 34 A 0.055 TO-220 AB C67078-S1333-A2 Maximum Ratings Parameter Symbol Values Unit Continuous drain current ID A TC = 27 C 34 Pulsed drain current IDpuls TC = 25 C 136 Avalanche current,limited by Tjmax I... See More ⇒

 ..2. Size:228K  inchange semiconductor
buz22.pdf pdf_icon

BUZ22

isc N-Channel Mosfet Transistor BUZ22 FEATURES Static Drain-Source On-Resistance R = 0.055 (Max) DS(on) SOA is Power Dissipation Limited High input impedance High speed switching Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Designed for applications such as switching regulators, switching converters, motor drivers,rel... See More ⇒

 0.1. Size:181K  siemens
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BUZ22

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 0.2. Size:174K  siemens
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BUZ22

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Detailed specifications: BUZ171, BUZ201, BUZ202, BUZ206, BUZ210, BUZ215, BUZ216, BUZ21L, IRF640N, BUZ220, BUZ221, BUZ231, BUZ255, BUZ272, BUZ305, BUZ307, BUZ308

Keywords - BUZ22 MOSFET specs

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