BUZ22 Datasheet and Replacement
Type Designator: BUZ22
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 125 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 34 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 80 nS
Cossⓘ - Output Capacitance: 450 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.055 Ohm
Package: TO-220AB
BUZ22 substitution
BUZ22 Datasheet (PDF)
buz22.pdf

BUZ 22 SIPMOS Power Transistor N channel Enhancement mode Avalanche-rated Pin 1 Pin 2 Pin 3G D SType VDS ID RDS(on) Package Ordering CodeBUZ 22 100 V 34 A 0.055 TO-220 AB C67078-S1333-A2Maximum RatingsParameter Symbol Values UnitContinuous drain current ID ATC = 27 C 34Pulsed drain current IDpulsTC = 25 C 136Avalanche current,limited by Tjmax I
buz22.pdf

isc N-Channel Mosfet Transistor BUZ22FEATURESStatic Drain-Source On-Resistance: R = 0.055(Max)DS(on)SOA is Power Dissipation LimitedHigh input impedanceHigh speed switchingMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONDesigned for applications such as switching regulators, switchingconverters, motor drivers,rel
Datasheet: BUZ171 , BUZ201 , BUZ202 , BUZ206 , BUZ210 , BUZ215 , BUZ216 , BUZ21L , IRF630 , BUZ220 , BUZ221 , BUZ231 , BUZ255 , BUZ272 , BUZ305 , BUZ307 , BUZ308 .
Keywords - BUZ22 MOSFET datasheet
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