BUZ221 Specs and Replacement

Type Designator: BUZ221

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 125 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 800 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 5.5 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 90 nS

Cossⓘ - Output Capacitance: 200 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 2 Ohm

Package: TO-204AA

BUZ221 substitution

- MOSFET ⓘ Cross-Reference Search

 

BUZ221 datasheet

 ..1. Size:181K  siemens
buz221.pdf pdf_icon

BUZ221

... See More ⇒

 9.1. Size:174K  siemens
buz220.pdf pdf_icon

BUZ221

... See More ⇒

 9.2. Size:85K  infineon
buz22.pdf pdf_icon

BUZ221

BUZ 22 SIPMOS Power Transistor N channel Enhancement mode Avalanche-rated Pin 1 Pin 2 Pin 3 G D S Type VDS ID RDS(on) Package Ordering Code BUZ 22 100 V 34 A 0.055 TO-220 AB C67078-S1333-A2 Maximum Ratings Parameter Symbol Values Unit Continuous drain current ID A TC = 27 C 34 Pulsed drain current IDpuls TC = 25 C 136 Avalanche current,limited by Tjmax I... See More ⇒

 9.3. Size:228K  inchange semiconductor
buz22.pdf pdf_icon

BUZ221

isc N-Channel Mosfet Transistor BUZ22 FEATURES Static Drain-Source On-Resistance R = 0.055 (Max) DS(on) SOA is Power Dissipation Limited High input impedance High speed switching Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Designed for applications such as switching regulators, switching converters, motor drivers,rel... See More ⇒

Detailed specifications: BUZ202, BUZ206, BUZ210, BUZ215, BUZ216, BUZ21L, BUZ22, BUZ220, AO3400, BUZ231, BUZ255, BUZ272, BUZ305, BUZ307, BUZ308, BUZ30A, BUZ31

Keywords - BUZ221 MOSFET specs

 BUZ221 cross reference

 BUZ221 equivalent finder

 BUZ221 pdf lookup

 BUZ221 substitution

 BUZ221 replacement

Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.