BUZ272 Datasheet and Replacement
Type Designator: BUZ272
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pd ⓘ - Maximum Power Dissipation: 125 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 15 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 120 nS
Cossⓘ - Output Capacitance: 360 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.3 Ohm
Package: TO-220AB
BUZ272 substitution
BUZ272 Datasheet (PDF)
buz272.pdf
BUZ 272SIPMOS Power Transistor P channel Enhancement mode Avalanche ratedPin 1 Pin 2 Pin 3G D SType VDS ID RDS(on) Package Ordering CodeBUZ 272 -100 V -15 A 0.3 TO-220 AB C67078-S1454-A2Maximum RatingsParameter Symbol Values UnitContinuous drain current ID ATC = 25 C -15Pulsed drain current IDpulsTC = 25 C -60Avalanche energy, single pulse EAS m
buz272.pdf
BUZ 272SIPMOS Power Transistor P channel Enhancement mode Avalanche ratedPin 1 Pin 2 Pin 3G D SType VDS ID RDS(on) Package Ordering CodeBUZ 272 -100 V -15 A 0.3 TO-220 AB C67078-S1454-A2Maximum RatingsParameter Symbol Values UnitContinuous drain current ID ATC = 25 C -15Pulsed drain current IDpulsTC = 25 C -60Avalanche energy, single pulse EAS m
Datasheet: BUZ215 , BUZ216 , BUZ21L , BUZ22 , BUZ220 , BUZ221 , BUZ231 , BUZ255 , IRFB4227 , BUZ305 , BUZ307 , BUZ308 , BUZ30A , BUZ31 , BUZ310 , BUZ31L , BUZ323 .
Keywords - BUZ272 MOSFET datasheet
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